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Amplificadores de RF
Amplificadores totalmente diferenciales (FDA) de RF
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TRF0213-SEP

ACTIVO

Amplif. de RF tolerante a la radiación, de casi CC a 14 GHz, de un único extremo a diferencial (S

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TRF0213-SEP

ACTIVO
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Detalles del producto

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 14000 Gain (typ) (dB) 13.8 Noise figure (typ) (dB) 8.9 OIP3 (typ) (dBm) 31 P1dB (typ) (dBm) 13.4 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -55 OIP2 (typ) (dBm) 53 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 174 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Catalog, Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 14000 Gain (typ) (dB) 13.8 Noise figure (typ) (dB) 8.9 OIP3 (typ) (dBm) 31 P1dB (typ) (dBm) 13.4 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -55 OIP2 (typ) (dBm) 53 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 174 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Catalog, Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
WQFN-FCRLF (RPV) 12 4 mm² 2 x 2
  • Vendor item drawing number: VID V62/25656
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Single-ended input, differential output
  • Excellent performance driving RF ADCs
  • Fixed 14dB gain
  • Bandwidth (3dB): >14GHz
  • Gain flatness (1dB): 12GHz
  • OIP3: 31dBm (4GHz), 31dBm (10GHz)
  • OP1dB: 13.4dBm (4GHz), 15.4dBm (10GHz)
  • NF: 8.9dB (4GHz), 10.6dB (10GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • 5V single-supply operation
  • Active current: 174mA
  • Vendor item drawing number: VID V62/25656
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Single-ended input, differential output
  • Excellent performance driving RF ADCs
  • Fixed 14dB gain
  • Bandwidth (3dB): >14GHz
  • Gain flatness (1dB): 12GHz
  • OIP3: 31dBm (4GHz), 31dBm (10GHz)
  • OP1dB: 13.4dBm (4GHz), 15.4dBm (10GHz)
  • NF: 8.9dB (4GHz), 10.6dB (10GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • 5V single-supply operation
  • Active current: 174mA

The TRF0213-SEP is a very high performance, radio frequency (RF) amplifier optimized for RF applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an RF sampling analog-to-digital converter (ADC) such as the high performance AFE7950-SEP or ADC12DJ5200-SEP. The device combines the functionality of a wide-band gain block and a wide-band passive balun. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0213-SEP operates on a single-rail supply and consumes about 174mA of active current. A power-down feature is also available for power savings.

The TRF0213-SEP is a very high performance, radio frequency (RF) amplifier optimized for RF applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an RF sampling analog-to-digital converter (ADC) such as the high performance AFE7950-SEP or ADC12DJ5200-SEP. The device combines the functionality of a wide-band gain block and a wide-band passive balun. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0213-SEP operates on a single-rail supply and consumes about 174mA of active current. A power-down feature is also available for power savings.
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Documentación técnica

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* Data sheet TRF0213-SEP Radiation Tolerant, Near-DC to > 14GHz, Single-Ended-to-Differential RF Amplifier datasheet PDF | HTML 16 dic 2025
* Radiation & reliability report TRF0213-SEP Total Ionizing Dose (TID) Report 08 ene 2026
* Radiation & reliability report TRF0213-SEP Production Flow and Reliability Report PDF | HTML 08 oct 2025
* Radiation & reliability report TRF0213-SEP, Radiation-Tolerant, Near-DC to >14GHz, Single-Ended-to-Differential RF Amp Single-Event Effects PDF | HTML 08 ene 2025

Diseño y desarrollo

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Modelo de simulación

TRF0213-SEP S-Parameter Model

SLVMET2.ZIP (8 KB) - S-Parameter Model
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WQFN-FCRLF (RPV) 12 Ultra Librarian
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Pedidos y calidad

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  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
  • Lugar de ensamblaje

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