UCC27712

アクティブ

インターロック機能搭載、1.8A/2.8A、620V、ハーフブリッジドライバ

ご注文はこちら

データシート

document-pdfAcrobat UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock データシート (Rev. B) (英語) PDF | HTML

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代替品と比較

比較対象デバイスと同等の機能で、ピン配置が異なる製品。

新規 UCC27734

アクティブ

700V、4A、ハーフブリッジゲートドライバ (8V UVLO およびインターロック搭載) same functionality

UCC27712

アクティブ

データシート

ご注文はこちら

製品詳細

Bootstrap supply voltage (max) (V)

700

Power switch

IGBT, MOSFET

Input supply voltage (min) (V)

10

Input supply voltage (max) (V)

20

Peak output current (A)

2.8

Operating temperature range (°C)

-40 to 150

Undervoltage lockout (typ) (V)

10

Rating

Catalog

Propagation delay time (µs)

0.1

Rise time (ns)

16

Fall time (ns)

10

Iq (mA)

0.25

Input threshold

CMOS, TTL

Channel input logic

Noninverting

Switch node voltage (V)

-11

Features

Dead time control, Interlock

Driver configuration

CMOS compatible, Dual, Noninverting, TTL compatible

Bootstrap supply voltage (max) (V)

700

Power switch

IGBT, MOSFET

Input supply voltage (min) (V)

10

Input supply voltage (max) (V)

20

Peak output current (A)

2.8

Operating temperature range (°C)

-40 to 150

Undervoltage lockout (typ) (V)

10

Rating

Catalog

Propagation delay time (µs)

0.1

Rise time (ns)

16

Fall time (ns)

10

Iq (mA)

0.25

Input threshold

CMOS, TTL

Channel input logic

Noninverting

Switch node voltage (V)

-11

Features

Dead time control, Interlock

Driver configuration

CMOS compatible, Dual, Noninverting, TTL compatible

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

High-side and low-side configuration
Dual inputs with output interlock and 150-ns deadtime
Fully operational up to 620-V, 700-V absolute maximum on HB pin
10-V to 20-V VDD recommended range
Peak output current 2.8-A sink, 1.8-A source
dv/dt immunity of 50 V/ns
Logic operational up to –11 V on HS pin
Negative voltage tolerance on inputs of –5 V
Large negative transient safe operating area
UVLO protection for both channels
Small propagation delay (100-ns typical)
Delay matching (12-ns typical)
Floating channel designed for bootstrap operation
Low quiescent current
TTL and CMOS compatible inputs
Industry standard SOIC-8 package
All parameters specified over temperature range, –40 °C to +125 °C

High-side and low-side configuration
Dual inputs with output interlock and 150-ns deadtime
Fully operational up to 620-V, 700-V absolute maximum on HB pin
10-V to 20-V VDD recommended range
Peak output current 2.8-A sink, 1.8-A source
dv/dt immunity of 50 V/ns
Logic operational up to –11 V on HS pin
Negative voltage tolerance on inputs of –5 V
Large negative transient safe operating area
UVLO protection for both channels
Small propagation delay (100-ns typical)
Delay matching (12-ns typical)
Floating channel designed for bootstrap operation
Low quiescent current
TTL and CMOS compatible inputs
Industry standard SOIC-8 package
All parameters specified over temperature range, –40 °C to +125 °C

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

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上位の文書	タイプ	タイトル	フォーマットオプション	最新の英語版をダウンロード		日付
*	データシート	UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock データシート (Rev. B)	PDF \| HTML			2020/03/05
	アプリケーション・ノート	HVAC システム向けゲートドライバの選択 (Rev. A 翻訳版)	PDF \| HTML	英語版 (Rev.A)	PDF \| HTML	2025/12/01
	アプリケーション・ノート	Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET	PDF \| HTML			2024/03/25
	アプリケーション・ノート	Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs	PDF \| HTML			2024/01/22
	技術記事	Selecting the right level of integration to meet motor design requirements	PDF \| HTML			2024/01/04
	アプリケーション・ノート	Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A)	PDF \| HTML			2023/09/08
	アプリケーション・ノート	ゲート駆動電流を増加させる 2 通りの方法の比較分析 (Rev. A)	PDF \| HTML			2022/02/17
	アプリケーション・ノート	Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D)				2021/04/07
	アプリケーション・ノート	Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery.				2020/05/12
	アプリケーション概要	External Gate Resistor Selection Guide (Rev. A)				2020/02/28
	アプリケーション概要	Understanding Peak IOH and IOL Currents (Rev. A)				2020/02/28
	その他の技術資料	Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)				2018/10/29
	技術記事	How to achieve higher system robustness in DC drives, part 3: minimum input pulse	PDF \| HTML			2018/09/19
	技術記事	How to achieve higher system robustness in DC drives, part 2: interlock and deadti	PDF \| HTML			2018/05/30
	技術記事	How to achieve higher system robustness in DC drives, part 1: negative voltage	PDF \| HTML			2018/04/17

設計と開発

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評価ボード

UCC27712EVM-287 — UCC27712 インターロック搭載、620V、1.8A、2.8A ハイサイド / ローサイドゲートドライバの評価基板

UCC27712EVM-287 は、ソース (供給) 電流とシンク (吸い込み) 電流のピーク能力が大きい 620V ハーフブリッジゲートドライバである UCC27712D の評価に適した設計を採用しています。この評価基板 (EVM) は、該当データシートを基準としてこのドライバ IC を評価する目的でも使用できます。また、ドライバ IC コンポーネントのセレクションガイドという目的で、この EVM を使用することも可能です。この評価基板 (EVM) は、同期整流降圧コンバータなどの電力段トポロジを形成する目的で簡単に構成することができ、レイアウトが及ぼす影響をテストすることも可能です。

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