BUF12840
- 10-BIT RESOLUTION
- 12-CHANNEL P-GAMMA
- READS FROM EXTERNAL EEPROM
- TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS
- RAIL-TO-RAIL OUTPUT:
- 300mV Min Swing-to-Rail (10mA)
- 200mV Min Swing-to-Rail (5mA)
- LOW SUPPLY CURRENT
- SUPPLY VOLTAGE: 9V to 20V
- DIGITAL SUPPLY: 2V to 5.5V
- TWO-WIRE INTERFACE: Supports 400kHz and 3.4MHz Operation
- APPLICATIONS
- TFT-LCD REFERENCE DRIVERS
All other trademarks are the property of their respective owners
The BUF12840 offers 12 programmable gamma channels with external electrically erasable programmable read-only memory (EEPROM) read capabilities.
The BUF12840 has two separate memory banks that allow simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma channels offer a rail-to-rail output that typically swings to within 200mV of either supply rail with a 5mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.
The BUF12840 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF12840 is offered in a QFN-24 package, and is specified from –40°C to +95°C.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | Prog Gamma-Voltage Generator w/ Integrated 2-Bank Memory & External EEPROM datasheet (Rev. A) | 2011. 7. 12 | ||
| 애플리케이션 노트 | Driving Capacitive Loads with Gamma Buffers | 2012. 11. 20 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
BUF12840EVM — BUF12840 평가 모듈
The BUF12840EVM is a platform for evaluating the performance of the BUF12840 under various signal, reference, and supply conditions.
SBOC431 — BUF12840EVM User Software
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |