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LM5109B-Q1

現行

具有 8-V UVLO 和高雜訊抗擾度的汽車 1-A、100-V 半橋式閘極驅動器

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產品規格表

LM5109B-Q1

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
WSON (NGT) 8 16 mm² 4 x 4
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.
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類型 標題 日期
* Data sheet LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver datasheet (Rev. A) PDF | HTML 2015年 12月 8日
Functional safety information LM5109B-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 2024年 9月 30日
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024年 3月 25日
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024年 1月 24日
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023年 9月 8日
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021年 4月 7日
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020年 5月 12日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019年 10月 22日
Application note Maximizing DC/DC converter designs with UCC27282 2019年 1月 18日
Application note UCC27282 Improving motor drive system robustness 2019年 1月 11日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日

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