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半橋式驅動器

LM5109B-Q1

現行

具有 8-V UVLO 和高雜訊抗擾度的汽車 1-A、100-V 半橋式閘極驅動器

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產品規格表

LM5109B-Q1

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
WSON (NGT) 8 16 mm² (4 mm × 4 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver datasheet (Rev. A) PDF | HTML 2015/12/8
功能安全資訊 LM5109B-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 2024/9/30
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29

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