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理想二極體與 ORing 控制器

LM74670-Q1

現行

具有 70uA 閘極驅動的 0.48-V 至 42-V、零 IQ 汽車理想二極體整流器控制器

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產品規格表

LM74670-Q1

現行
產品規格表 立即訂購

產品詳細資料

Vin (max) (V) 42 Vin (min) (V) 0.48 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Imax (A) 250 Iq (typ) (mA) 0 Iq (max) (mA) 0 IGate source (typ) (µA) 70 IGate source (max) (µA) 67 IGate sink (typ) (mA) 0.07 IGate pulsed (typ) (A) 0.1 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM, Reference Design, Simulation Model VGS (max) (V) 2.5 Product type Ideal diode controller
Vin (max) (V) 42 Vin (min) (V) 0.48 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Imax (A) 250 Iq (typ) (mA) 0 Iq (max) (mA) 0 IGate source (typ) (µA) 70 IGate source (max) (µA) 67 IGate sink (typ) (mA) 0.07 IGate pulsed (typ) (A) 0.1 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM, Reference Design, Simulation Model VGS (max) (V) 2.5 Product type Ideal diode controller
VSSOP (DGK) 8 14.7 mm² 3 x 4.9
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Peak Input AC Voltage: 42 V
  • Zero IQ
  • Charge Pump Gate Driver for external N-Channel MOSFET
  • Low Forward-Voltage Drop and Less Power Dissipation Compared to Schottky Diode
  • Capable of handling AC signal up to 300-Hz Frequency
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Peak Input AC Voltage: 42 V
  • Zero IQ
  • Charge Pump Gate Driver for external N-Channel MOSFET
  • Low Forward-Voltage Drop and Less Power Dissipation Compared to Schottky Diode
  • Capable of handling AC signal up to 300-Hz Frequency

The LM74670-Q1 is a controller device that can be used with an N-Channel MOSFET in full or half bridge rectifier architectures for alternators. It is designed to drive an external MOSFET to emulate an ideal diode. A unique advantage of this scheme is that it is not ground referenced, thus it has zero IQ. The schottky diodes in full or half bridge rectifiers and alternators can be replaced with the LM74670-Q1 solution to avoid forward conduction diode losses and produce more efficient AC-DC converters.

The LM74670-Q1 controller provides a gate drive for external N-Channel MOSFET and a fast response internal comparator to pull-down the MOSFET Gate in the event of reverse polarity. This device can support an AC signal frequency up to 300Hz.

The LM74670-Q1 is a controller device that can be used with an N-Channel MOSFET in full or half bridge rectifier architectures for alternators. It is designed to drive an external MOSFET to emulate an ideal diode. A unique advantage of this scheme is that it is not ground referenced, thus it has zero IQ. The schottky diodes in full or half bridge rectifiers and alternators can be replaced with the LM74670-Q1 solution to avoid forward conduction diode losses and produce more efficient AC-DC converters.

The LM74670-Q1 controller provides a gate drive for external N-Channel MOSFET and a fast response internal comparator to pull-down the MOSFET Gate in the event of reverse polarity. This device can support an AC signal frequency up to 300Hz.

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* Data sheet LM74670-Q1 Zero IQ Smart Diode Rectifier Controller datasheet (Rev. A) PDF | HTML 2015年 10月 27日
E-book 11 Ways to Protect Your Power Path 2019年 7月 3日

設計與開發

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開發板

LM74670-SQEVM — LM74670-Q1 評估板

The LM74670-SQEVM evaluation module demostrates reverse polarity protection as a replacement of Schottkey Diodes and P-Channel MOSFETs. In this reverse polarity protection solution the LM74670 Smart Diode Controller is used to provide a gate drive for 40V (VDS) external N-Channel MOSFET. The (...)

使用指南: PDF
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模擬型號

LM74670-Q1 TINA-TI Transient Reference Design

SNOM665.TSC (597 KB) - TINA-TI Reference Design
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模擬型號

LM74670-Q1 TINA-TI Transient Spice Model

SNOM664.ZIP (30 KB) - TINA-TI Spice Model
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模擬型號

LM74670-Q1 Unencrypted PSpice Transient Model Package (Rev. A)

SNOM561A.ZIP (55 KB) - PSpice Model
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參考設計

TIDA-00858 — 新型高效率全橋式整流器參考設計

TIDA-00858 implements a high-efficiency approach to fullbridge rectifier. This reference design replaces diodes with four N-Channel MOSFETs,combined with LM74670-Q1 smart diode controllers in a full-bridge rectifier configuration. LM74670-Q1 is an effective zero-IQ replacement of diode loss. This (...)
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