首頁 電源管理 電源保護開關與控制器 理想二極體與 ORing 控制器

LM74670-Q1

現行

具有 70uA 閘極驅動的 0.48-V 至 42-V、零 IQ 汽車理想二極體整流器控制器

產品詳細資料

Vin (max) (V) 42 Vin (min) (V) 0.48 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Imax (A) 250 Iq (typ) (mA) 0 Iq (max) (mA) 0 IGate source (typ) (µA) 70 IGate source (max) (µA) 67 IGate sink (typ) (mA) 0.07 IGate pulsed (typ) (A) 0.1 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM, Reference Design, Simulation Model VGS (max) (V) 2.5 Product type Ideal diode controller
Vin (max) (V) 42 Vin (min) (V) 0.48 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection Imax (A) 250 Iq (typ) (mA) 0 Iq (max) (mA) 0 IGate source (typ) (µA) 70 IGate source (max) (µA) 67 IGate sink (typ) (mA) 0.07 IGate pulsed (typ) (A) 0.1 Operating temperature range (°C) -40 to 125 IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20 Design support EVM, Reference Design, Simulation Model VGS (max) (V) 2.5 Product type Ideal diode controller
VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm)
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Peak Input AC Voltage: 42 V
  • Zero IQ
  • Charge Pump Gate Driver for external N-Channel MOSFET
  • Low Forward-Voltage Drop and Less Power Dissipation Compared to Schottky Diode
  • Capable of handling AC signal up to 300-Hz Frequency
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Peak Input AC Voltage: 42 V
  • Zero IQ
  • Charge Pump Gate Driver for external N-Channel MOSFET
  • Low Forward-Voltage Drop and Less Power Dissipation Compared to Schottky Diode
  • Capable of handling AC signal up to 300-Hz Frequency

The LM74670-Q1 is a controller device that can be used with an N-Channel MOSFET in full or half bridge rectifier architectures for alternators. It is designed to drive an external MOSFET to emulate an ideal diode. A unique advantage of this scheme is that it is not ground referenced, thus it has zero IQ. The schottky diodes in full or half bridge rectifiers and alternators can be replaced with the LM74670-Q1 solution to avoid forward conduction diode losses and produce more efficient AC-DC converters.

The LM74670-Q1 controller provides a gate drive for external N-Channel MOSFET and a fast response internal comparator to pull-down the MOSFET Gate in the event of reverse polarity. This device can support an AC signal frequency up to 300Hz.

The LM74670-Q1 is a controller device that can be used with an N-Channel MOSFET in full or half bridge rectifier architectures for alternators. It is designed to drive an external MOSFET to emulate an ideal diode. A unique advantage of this scheme is that it is not ground referenced, thus it has zero IQ. The schottky diodes in full or half bridge rectifiers and alternators can be replaced with the LM74670-Q1 solution to avoid forward conduction diode losses and produce more efficient AC-DC converters.

The LM74670-Q1 controller provides a gate drive for external N-Channel MOSFET and a fast response internal comparator to pull-down the MOSFET Gate in the event of reverse polarity. This device can support an AC signal frequency up to 300Hz.

下載 觀看有字幕稿的影片 影片

您可能會感興趣的類似產品

open-in-new 比較替代產品
針腳對針腳的功能與所比較的裝置相同。
LM74610-Q1 現行 0.48-V 至 42-V、零 IQ 汽車理想二極體控制器 Same functionality and size but with 10-uA gate drive

技術文件

找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 2
重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM74670-Q1 Zero IQ Smart Diode Rectifier Controller datasheet (Rev. A) PDF | HTML 2015/10/27
電子書 11 Ways to Protect Your Power Path 2019/7/3

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LM74670-SQEVM — 用於進行反向極性保護的智慧二極體控制器評估模組

LM74670-SQEVM 評估模組展示反極性保護,以取代蕭特基二極體與 P 通道 MOSFET。在此反極性保護解決方案中,使用 LM74670 智慧型二極體控制器為 40V (VDS) 外部 N 通道 MOSFET 提供閘極驅動。LM74670-SQEVM 在與電源供應器串聯連接時,會模擬理想二極體特性。當在輸入端感測到負電壓時,LM74670 會拉低 MOSFET 閘極並將連接的負載與電源供應器隔離。TVS 電壓箝位二極體 D1_1 與 D1_2 使 LM74670-SQEVM 可安全進行 ISO7637 暫態脈衝測試。

使用指南: PDF
支援產品和硬體
有庫存
限制:
??asset.out-of-stock-ti_zh_TW??
無法提供
模擬型號

LM74670-Q1 TINA-TI Transient Reference Design

SNOM665.TSC (597 KB) - TINA-TI 參考設計
支援產品和硬體
模擬型號

LM74670-Q1 TINA-TI Transient Spice Model

SNOM664.ZIP (30 KB) - TINA-TI Spice 模型
支援產品和硬體
模擬型號

LM74670-Q1 Unencrypted PSpice Transient Model Package (Rev. A)

SNOM561A.ZIP (55 KB) - PSpice 模型
支援產品和硬體
參考設計

TIDA-00858 — 新型高效率全橋式整流器參考設計

TIDA-00858 採用高效率的全橋整流器設計。此參考設計以四個 N 通道 MOSFET 取代二極體,並結合 LM74670-Q1 智慧型二極體控制器,構成全橋整流器配置。LM74670-Q1 是二極體損耗的有效零 IQ 替代品。此設計可在 AC 輸入電壓高達 45V 的情況下產生整流 DC 電壓,且二極體正向壓降為零。與肖特基二極體整流器相比,它能夠處理 300Hz 頻率的 AC 輸入和高達 100A 的輸出電流,且散熱要求更低。

支援產品和硬體
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VSSOP (DGK) 8 Ultra Librarian

訂購與品質

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片系列

觀看所有影片

影片