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TPSI2240-Q1

現行

車用 1200V、50mA 隔離開關，具有強化型隔離和崩瀉保護

立即訂購
產品規格表

TPSI2240-Q1

現行
產品規格表 立即訂購

產品詳細資料

FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 0.6mA avalanche current, 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 0.6mA avalanche current, 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses

      • TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses

      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
    • Reinforced Isolation rating, VISO, up to 4750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses

      • TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses

      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
    • Reinforced Isolation rating, VISO, up to 4750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.
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類型 標題 日期
* Data sheet TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) PDF | HTML 2025年 12月 12日
Functional safety information TPSI2240-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 2025年 12月 11日
Certificate TPSI2240Q1EVM EU Declaration of Conformity (DoC) 2025年 7月 1日

設計與開發

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開發板

TPSI2240Q1EVM — TPSI2240-Q1 評估模組

TPSI2240Q1EVM 是包含多個測試點和跳線的硬體評估模組 (EVM)，可完整評估 TPSI2240-Q1 的性能與功能。此評估模組包含測試與評估 TPSI2240-Q1 裝置所需的材料，以便將裝置無縫設計成電池管理系統等較大型應用中。單獨使用 TPSI2240Q1EVM 或將其與外部微控制器搭配來驅動裝置的啟用訊號。使用 EVM 評估應用需求，例如介電耐受測試（也稱為高電位 (HiPot) 測試）和直流快速充電器突波電流，而無需任何外部保護元件。EVM 採用 SOIC 封裝，並搭載 TPSI2240-Q1。
使用指南: PDF | HTML
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參考設計

TIDA-010985 — 適用於具有大型 Y 電容參考設計的 800V DC 系統的電阻橋絕緣監控裝置

此參考設計採用電阻橋絕緣監控裝置 (IMD)。此設計可準確偵測對稱和不對稱隔離電阻故障。此參考設計也可測量具有大型 Y 電容的高電壓 DC 系統電容。此設計符合 UL 標準的反應時間要求。
Design guide: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (DWQ) 11 Ultra Librarian
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