There are considerations in the design
to help reduce the stress on the boot diode and ways to mitigate possible damage to
the boot diode in the bidirectional DC-DC applications.
Firstly, proper sizing of the
bootstrap capacitor is important to properly driving the power MOSFETs and also
resulting in the fastest start-up of the HB-HS bias. We do not recommend oversizing
the bootstrap capacitor in these applications.
There are additional design
considerations that can address the gate driver and bootstrap start-up as
follows:
- Incorporate a low frequency LO
pulse on the phase that is not actively delivering power. This makes sure that
the HB-HS bias is fully precharged prior to the phase being enabled.
- Make sure that when a phase is
enabled, that the 1st initial LO pulse is a long pulse adequate to
charge the bootstrap capacitor where the boot diode forward current has gone to
zero or near zero. Random enabling of the phase during the normal HI and LI
pulse widths can result in short LI initial pulse widths leading to high forward
current flowing in the boot diode and then higher reverse recovery current when
HS goes high.
- Add an external Schottky diode in
parallel with the driver internal boot diode. Use a small package diode to allow
close placement to the IC VDD and HB pins with low VF and low
RDYN.