SLASFH8 March   2026 MSPM33C321A-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
      1.      10
    3. 6.3 Signal Descriptions
      1.      12
      2.      13
      3.      14
      4.      15
      5.      16
      6.      17
      7.      18
      8.      19
      9.      20
      10.      21
      11.      22
      12.      23
      13.      24
      14.      25
      15.      26
      16.      27
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
      4. 7.5.4 VBAT current consumption
    6. 7.6  Flash Memory Characteristics
    7. 7.7  Power Supply Sequencing
      1. 7.7.1 Power Supply Ramp
      2. 7.7.2 POR and BOR
      3. 7.7.3 VBat Characteristics
      4. 7.7.4 Timing Characteristics
    8. 7.8  Clock Specifications
      1. 7.8.1 System Oscillator (SYSOSC)
      2. 7.8.2 High Frequency Crystal/Clock
      3. 7.8.3 System Phase Lock Loop (SYSPLL)
      4. 7.8.4 Low Frequency Oscillator (LFOSC)
      5. 7.8.5 Low Frequency Crystal/Clock
    9. 7.9  Analog Specifications
      1. 7.9.1 ADC Specifications
        1. 7.9.1.1 ADC Electrical Characteristics
        2. 7.9.1.2 ADC Switching Characteristics
        3. 7.9.1.3 ADC Linearity Parameters
        4. 7.9.1.4 Typical Connection Diagram
      2. 7.9.2 COMP Specifications
        1. 7.9.2.1 Comparator Electrical Characteristics
        2. 7.9.2.2 COMP DAC Electrical Characteristics
      3. 7.9.3 VREF Specifications
        1. 7.9.3.1 VREF Voltage Characteristics
        2. 7.9.3.2 VREF Electrical Characteristics
      4. 7.9.4 Analog VBOOST Specification
        1. 7.9.4.1 Analog Mux VBOOST
      5. 7.9.5 Temperature Sensor
    10. 7.10 Serial Interface Specifications
      1. 7.10.1 UART
        1. 7.10.1.1 UART
      2. 7.10.2 I2C
        1. 7.10.2.1 I2C Characteristics
        2. 7.10.2.2 I2C Filter
        3. 7.10.2.3 I2C Timing Diagram
      3. 7.10.3 SPI
        1. 7.10.3.1 SPI
        2. 7.10.3.2 SPI Timing Diagram
      4. 7.10.4 CAN
        1. 7.10.4.1 CAN
      5. 7.10.5 QSPI
        1. 7.10.5.1 QSPI
        2. 7.10.5.2 QSPI Timing Diagram
      6. 7.10.6 I2S/TDM
        1. 7.10.6.1 Serial Audio
        2. 7.10.6.2 I2S/TDM Timing Diagram
    11. 7.11 Digital IO
    12. 7.12 TRNG
      1. 7.12.1 TRNG Electrical Characteristics
      2. 7.12.2 TRNG Switching Characteristics
    13. 7.13 Emulation and Debug
      1. 7.13.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Arm Cortex-M33 core with TrustZone and FPU
    2. 8.2  Power Management and Clock Unit (PMCU)
      1. 8.2.1 Power Management Unit (PMU)
      2. 8.2.2 Clock Module (CKM)
      3. 8.2.3 Operating Modes
        1. 8.2.3.1 Functionality by Operating Mode
    3. 8.3  Device Memory Map
      1. 8.3.1 Memory Organization
      2. 8.3.2 Peripheral Memory Map
    4. 8.4  NVIC Interrupt Map
    5. 8.5  Embedded Flash Memory
    6. 8.6  Embedded SRAM
    7. 8.7  DMA
    8. 8.8  Event Manager
    9. 8.9  Error Aggregator Module (EAM)
    10. 8.10 GPIO
    11. 8.11 IOMUX
      1. 8.11.1 Input/Output Diagrams
    12. 8.12 Analog Modules
      1. 8.12.1 HSADC
      2. 8.12.2 COMP
      3. 8.12.3 Temperature Sensor
      4. 8.12.4 VREF
      5. 8.12.5 Device Analog Connections
    13. 8.13 Security and Cryptography
      1. 8.13.1 Global Security Controller (GSC)
      2. 8.13.2 AESADV
      3. 8.13.3 SHA256
      4. 8.13.4 Public Key Algorithm (PKA)
      5. 8.13.5 TRNG
      6. 8.13.6 Keystore
      7. 8.13.7 CRC
    14. 8.14 Serial Communication Interfaces
      1. 8.14.1 UNICOMM (UART/I2C/SPI)
        1. 8.14.1.1 UART (UNICOMM)
        2. 8.14.1.2 I2C (UNICOMM)
        3. 8.14.1.3 SPI (UNICOMM)
      2. 8.14.2 CAN-FD
      3. 8.14.3 Quad SPI (QSPI)
      4. 8.14.4 Digital Audio Interface - I2S/TDM
    15. 8.15 LFSS
    16. 8.16 Timers, RTC and Watchdogs
      1. 8.16.1 Timers (TIMx)
      2. 8.16.2 RTC_A
      3. 8.16.3 IWDT
      4. 8.16.4 WWDT
    17. 8.17 Serial Wire Debug Interface
    18. 8.18 Bootstrap Loader (BSL)
    19. 8.19 Device Factory Constants
    20. 8.20 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Getting Started and Next Steps
    2. 10.2 Device Nomenclature
    3. 10.3 Tools and Software
    4. 10.4 Documentation Support
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.6 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply
VDDPGM/ERASE Program and erase supply voltage 1.71 3.6 V
IDDERASE Supply current from VDD during erase operation Supply current delta 10 mA
IDDPGM Supply current from VDD during program operation Supply current delta 10 mA
Endurance
NWEC(CODEFLASH) Erase/program cycle endurance (code flash) 20 k cycles
NWEC(DATAFLASH)(1) Erase/program cycle endurance (data flash) 100 k cycles
NE(MAX) Total erase operations before failure (2) 802 k erase operations
NW(MAX) Write operations per word line before sector erase (3) 83 write operations
Retention
tRET_85 Flash memory data retention -40°C <= Tj <= 85°C 60 years
tRET_105 Flash memory data retention -40°C <= Tj <= 105°C 11.4 years
tRET_130 Flash memory data retention -40°C <= Tj <= 130°C 2.4 years
Program and Erase Timing
tPROG (WORD, 128) Program time for flash word (4) (6) 75 µs
tPROG (SEC, 128) Program time for 2kB sector (5) (6) 5.1 ms
tERASE (SEC) Sector erase time ≤2k erase/program cycles, Tj ≥ 25°C 4 20 ms
tERASE (SEC) Sector erase time ≤10k erase/program cycles, Tj ≥ 25°C 20 150 ms
tERASE (SEC) Sector erase time <10k erase/program cycles 20 ms
tERASE (SEC) Sector erase time <50k erase/program cycles, 0°C < Tj < 125°C 40 ms
tERASE (BANK) Bank erase time <10k erase/program cycles 22 ms
(1) Data flash with high erase/program cycle endurance can be used for EEPROM emulation.
(2) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is considered to be one erase operation.
(3) Maximum number of write operations allowed per word line (256 bytes) before the word line must be erased. If additional writes to the same word line are required, a sector erase is required once the maximum number of write operations per word line is reached.
(4) Program time is defined as the time from when the program command is triggered until the command completion interrupt flag is set in the flash controller.
(5) Sector program time is defined as the time from when the first word program command is triggered until the final word program command completes and the interrupt flag is set in the flash controller.  This time includes the time needed for software to load each flash word (after the first flash word) into the flash controller during programming of the sector.
(6) Flash word size is 128 data bits (16 bytes). On devices with ECC, the total flash word size is 144 bits (128 data bits plus 16 ECC bits).