SLUSFN0A April   2025  – December 2025 BQ25630

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Description (continued)
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Power-On-Reset (POR)
      2. 8.3.2  Device Power Up from Battery
      3. 8.3.3  USB-C Detection
        1. 8.3.3.1 Legacy Adapter Detection
        2. 8.3.3.2 USB-C Dead Battery Mode
        3. 8.3.3.3 SNK Mode
        4. 8.3.3.4 SRC Mode
        5. 8.3.3.5 DRP Mode - Dual Role Port
        6. 8.3.3.6 USB-C Debug Accessory Detection
      4. 8.3.4  Device Power Up from Input Source
        1. 8.3.4.1 REGN LDO Power Up
        2. 8.3.4.2 D+/D– Detection Sets Input Current Limit
        3. 8.3.4.3 Input Voltage Limit Threshold Setting (VINDPM Threshold)
        4. 8.3.4.4 Converter Power-Up
        5. 8.3.4.5 Input Current Optimizer (ICO)
        6. 8.3.4.6 Switching Frequency and Dithering Feature
      5. 8.3.5  Power Path Management
        1. 8.3.5.1 Narrow VDC Architecture
        2. 8.3.5.2 Dynamic Power Management
        3. 8.3.5.3 High Impedance (HIZ) Mode
      6. 8.3.6  Battery Charging Management
        1. 8.3.6.1 Autonomous Charging Cycle
        2. 8.3.6.2 Battery Charging Profile
        3. 8.3.6.3 Charging Termination
        4. 8.3.6.4 Thermistor Qualification
          1. 8.3.6.4.1 Advanced Temperature Profile in Charge Mode
          2. 8.3.6.4.2 TS Pin Thermistor Configuration
          3. 8.3.6.4.3 Cold/Hot Temperature Window in OTG Mode
          4. 8.3.6.4.4 JEITA Charge Rate Scaling
        5. 8.3.6.5 Charging Safety Timers
        6. 8.3.6.6 Alternate Power from Input
      7. 8.3.7  USB On-The-Go (OTG)
        1. 8.3.7.1 Boost OTG Mode
      8. 8.3.8  Integrated 12-bit ADC for Monitoring
      9. 8.3.9  Status Outputs (INT , PG )
        1. 8.3.9.1 PG Pin Power Good Indicator
        2. 8.3.9.2 Interrupts and Status, Flag, and Mask Bits
        3. 8.3.9.3 Interrupt to Host (INT)
      10. 8.3.10 BATFET Control
        1. 8.3.10.1 Shutdown Mode
        2. 8.3.10.2 Ship Mode
        3. 8.3.10.3 Standby Mode
        4. 8.3.10.4 System Power Reset
      11. 8.3.11 Protections
        1. 8.3.11.1 Voltage and Current Monitoring in Battery Only and HIZ Modes
          1. 8.3.11.1.1 Battery Overcurrent Protection
          2. 8.3.11.1.2 Battery Undervoltage Lockout
        2. 8.3.11.2 Voltage and Current Monitoring in Buck Mode
          1. 8.3.11.2.1 Input Overvoltage
          2. 8.3.11.2.2 System Overvoltage Protection (SYSOVP)
          3. 8.3.11.2.3 Forward Converter Cycle-by-Cycle Current Limit
          4. 8.3.11.2.4 System Short
          5. 8.3.11.2.5 Battery Overvoltage Protection (BATOVP)
          6. 8.3.11.2.6 Sleep Comparator
        3. 8.3.11.3 Voltage and Current Monitoring in Boost Mode
          1. 8.3.11.3.1 Boost Mode Overvoltage Protection
          2. 8.3.11.3.2 Boost Mode Duty Cycle Protection
          3. 8.3.11.3.3 Boost Mode PMID Undervoltage Protection
          4. 8.3.11.3.4 Boost Mode Battery Undervoltage
          5. 8.3.11.3.5 Boost Converter Cycle-by-Cycle Current Limit
          6. 8.3.11.3.6 Boost Mode SYS Short
        4. 8.3.11.4 Thermal Regulation and Thermal Shutdown
          1. 8.3.11.4.1 Thermal Protection in Buck Mode
          2. 8.3.11.4.2 Thermal Protection in Boost Mode
          3. 8.3.11.4.3 Thermal Protection in Battery-only Mode
        5. 8.3.11.5 Liquid Detection and Corrosion Mitigation (Patent Pending)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Host Mode and Default Mode
      2. 8.4.2 Register Bit Reset
    5. 8.5 Programming
      1. 8.5.1 Serial Interface
        1. 8.5.1.1 Data Validity
        2. 8.5.1.2 START and STOP Conditions
        3. 8.5.1.3 Byte Format
        4. 8.5.1.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 8.5.1.5 Target Address and Data Direction Bit
        6. 8.5.1.6 Single Write and Read
        7. 8.5.1.7 Multi-Write and Multi-Read
    6. 8.6 Register Maps
      1. 8.6.1 Register Programming
      2. 8.6.2 BQ25630 Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input Capacitor
        3. 9.2.2.3 Output Capacitor
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.3.4.6 Switching Frequency and Dithering Feature

Under normal operation the device switches with a fixed frequency. The charger also supports a frequency dithering function to improve EMI performance and help pass IEC-CISPR 22 specification. This function is disabled by default (EN_DITHER=00b) and can be enabled by setting EN_DITHER=01/10/11b. When dithering is enabled, the switching frequency is not fixed and varies within a range determined by the EN_DITHER setting with 01/10/11b corresponding to ±2%/4%/6% switching frequency. A larger dithering range produces a smaller EMI noise peak, but can also result in a slightly larger VBUS/VSYS capacitor voltage ripple. Select the lowest dithering range which can pass IEC-CISPR 22 specification due to this trade-off. The patented dithering pattern can improve EMI performance from switching frequency and up to 30MHz high frequency range which covers the entire conductive EMI noise range.