SLVSHJ7A February   2025  – September 2025 DRV8163-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
    1. 5.1 HW Variant
    2. 5.2 SPI Variant
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Electrical Characteristics
    5. 6.5 Timing Requirements
    6. 6.6 Timing Diagrams
    7. 6.7 Thermal Information
      1. 6.7.1 Transient Thermal Impedance & Current Capability
    8. 6.8 Switching Waveforms
      1. 6.8.1 Output switching transients
        1. 6.8.1.1 High-Side Recirculation
        2. 6.8.1.2 Low-Side Recirculation
      2. 6.8.2 Wake-up Transients
        1. 6.8.2.1 HW Variant
        2. 6.8.2.2 SPI Variant
      3. 6.8.3 Fault Reaction Transients
        1. 6.8.3.1 Retry setting
        2. 6.8.3.2 Latch setting
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 External Components
        1. 7.3.1.1 HW Variant
        2. 7.3.1.2 SPI Variant
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 Register - Pin Control - SPI Variant Only
      3. 7.3.3 Device Configuration
        1. 7.3.3.1 Slew Rate (SR)
        2. 7.3.3.2 IPROPI
        3. 7.3.3.3 ITRIP Regulation
        4. 7.3.3.4 DIAG
          1. 7.3.3.4.1 HW variant
          2. 7.3.3.4.2 SPI variant
      4. 7.3.4 Protection and Diagnostics
        1. 7.3.4.1 Over Current Protection (OCP)
        2. 7.3.4.2 Over Temperature Warning (OTW) - SPI Variant Only
        3. 7.3.4.3 Over Temperature Protection (TSD)
        4. 7.3.4.4 Off-State Diagnostics (OLP)
        5. 7.3.4.5 On-State Diagnostics (OLA) - SPI Variant Only
        6. 7.3.4.6 VM Over Voltage Monitor - SPI Variant Only
        7. 7.3.4.7 VM Under Voltage Monitor
        8. 7.3.4.8 Power On Reset (POR)
        9. 7.3.4.9 Event Priority
      5. 7.3.5 Device Functional Modes
        1. 7.3.5.1 SLEEP State
        2. 7.3.5.2 STANDBY State
        3. 7.3.5.3 Wake-up to STANDBY State
        4. 7.3.5.4 ACTIVE State
        5. 7.3.5.5 nSLEEP Reset Pulse (HW Variant, LATCHED setting Only)
      6. 7.3.6 Programming - SPI Variant Only
        1. 7.3.6.1 Serial Peripheral Interface (SPI)
        2. 7.3.6.2 Standard Frame
        3. 7.3.6.3 SPI for Multiple Peripherals
          1. 7.3.6.3.1 Daisy Chain Frame for Multiple Peripherals
      7. 7.3.7 Register Map - SPI Variant Only
        1. 7.3.7.1 User Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Load Summary
    2. 8.2 Typical Application
      1. 8.2.1 HW Variant
      2. 8.2.2 SPI Variant
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Bulk Capacitance Sizing
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.7.1 Transient Thermal Impedance & Current Capability

Information based on thermal simulations

Table 6-1 Transient Thermal Impedance (RθJA) and Current Capability
PART NUMBERRθJA [°C/W](1)Current [A](2)
without PWM(3)with PWM(4)
0.1sec1secDC0.1sec1secDC1secDC
DRV8163-Q14.413.9

35.1

18.110.26.48.64.9
(1) Based on thermal simulations using 40mm x 40mm x 1.6mm 4-layer PCB – 2oz Cu on top and bottom layers, 1oz Cu on internal planes with 0.3 mm thermal via drill diameter, 0.025mm Cu plating, 1 minimum mm via pitch.
(2) Estimated transient current capability at 85 °C ambient temperature for junction temperature rise to 150°C
(3) Only conduction losses (I2R) are considered
(4) Switching loss roughly estimated by the following equation:
Equation 1. PSW = VVM x ILoad x fPWM x VVM/SR, where VVM = 48V, fPWM = 20KHz, SR = 175V/µs