SLVSHX5A July   2025  – December 2025 TPS2HC08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Accurate Current Sense
        1. 8.3.1.1 SNS Response Time
        2. 8.3.1.2 SNS Output Filter
        3. 8.3.1.3 Multiplexing of Current Sense Across Channels
        4. 8.3.1.4 Multiplexing of Current Sense Across Devices
      2. 8.3.2  Overcurrent Protection
        1. 8.3.2.1 Adjustable Current Limit
          1. 8.3.2.1.1 Current Limiting With Thermal Regulation
          2. 8.3.2.1.2 Current Limiting With No Thermal Regulation
          3. 8.3.2.1.3 Current Limit Foldback
          4. 8.3.2.1.4 Current Limit Accuracy
        2. 8.3.2.2 Thermal Shutdown
          1. 8.3.2.2.1 Relative Thermal Shutdown
          2. 8.3.2.2.2 Absolute Thermal Shutdown
      3. 8.3.3  Retry Protection Mechanism From Thermal Shutdown
        1. 8.3.3.1 Reliable Switch-On Behavior
      4. 8.3.4  Inductive-Load Switching-Off Clamp
      5. 8.3.5  Slower Slew Rate Option
      6. 8.3.6  Capacitive Load Charging
        1. 8.3.6.1 Adjustable Current Limiting for Inrush Control
        2. 8.3.6.2 Current Limit with Thermal Regulation for Capacitive Loads
        3. 8.3.6.3 Retry Thermal Shutdown Behavior for Capacitive Loads
        4. 8.3.6.4 Impact of DC Load on Capacitive Charging Capability
        5. 8.3.6.5 Device Capability
      7. 8.3.7  Bulb Charging
        1. 8.3.7.1 Non-Thermal Regulated Mode for Bulb Loads
        2. 8.3.7.2 Thermal Management During Bulb Inrush
        3. 8.3.7.3 Device Capability
      8. 8.3.8  Fault Detection and Reporting
        1. 8.3.8.1 Diagnostic Enable Function
        2. 8.3.8.2 FLT Reporting
        3. 8.3.8.3 FLT Timings
        4. 8.3.8.4 Fault Table
      9. 8.3.9  Full Diagnostics
        1. 8.3.9.1 Open-Load Detection
          1. 8.3.9.1.1 Channel On
          2. 8.3.9.1.2 Channel Off
        2. 8.3.9.2 Short-to-Battery Detection
        3. 8.3.9.3 Reverse-Polarity and Battery Protection
      10. 8.3.10 Full Protections
        1. 8.3.10.1 UVLO Protection
        2. 8.3.10.2 Loss of GND Protection
        3. 8.3.10.3 Loss of Power Supply Protection
        4. 8.3.10.4 Reverse Current Protection
        5. 8.3.10.5 Protection for MCU I/Os
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 EMC Transient Disturbances Test
      3. 9.2.3 Transient Thermal Performance
      4. 9.2.4 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Wettable Flank Package
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.2.2.1 EMC Transient Disturbances Test

Due to the severe electrical conditions in the automotive environment, immunity capacity against electrical transient disturbances is required, especially for a high side power switch, which is connected directly to the battery. Detailed test requirements are in accordance with the ISO 7637-2:2011 and ISO 16750-2:2010 standards.

Table 9-3 ISO 7637-2:2011(E) in 12V System
TEST ITEMTEST PULSE SEVERITY LEVEL AND Vs ACCORDINGLY(1)(2)PULSE DURATION (td)MINIMUM NUMBER OF PULSES OR TEST TIMEBURST-CYCLE PULSE-REPETITION TIMEINPUT RESISTANCE (Ω)(3)FUNCTION PERFORMANCE STATUS CLASSIFICATION(4)
LEVELVs/VMINMAX
1III–1122ms500 pulses0.5s—10Status II
2aIII5550µs500 pulses0.2s5s2Status II
2bIV100.2s to 2s10 pulses0.5s5s0 to 0.05Status II
3aIV–2200.1µs1h90ms100ms50Status II
3bIV1500.1µs1h90ms100ms50Status II
(1) Tested both under input low condition and high condition.
(2) The pulse 2A voltage is 54V maximum from VBB with respect to ground. A voltage suppressing mechanism must be used to pass Level III. This test was run with an 1μF capacitor from VBB to system ground.
(3) GND pin network is a 4.7kΩ resistor in parallel with a diode BAS21-7-F.
(4) Status II: The function does not perform as designed during the test, but returns automatically to normal operation after the test.
Table 9-4 ISO 16750-2:2010(E) Load Dump Test B in 12V System
TEST ITEM TEST PULSE SEVERITY LEVEL AND Vs ACCORDINGLY(1)(2) PULSE DURATION (td) MINIMUM NUMBER OF PULSES OR TEST TIME BURST-CYCLE PULSE-REPETITION TIME INPUT RESISTANCE (Ω)(3) FUNCTION PERFORMANCE STATUS CLASSIFICATION(4)(5)
LEVEL Vs/V
Test B 35 40ms to 400ms 5 pulses 60s 0.5 to 4 Status II
(1) Tested both under input low condition and high condition (DIAG_EN, EN, and VBB are all classified as inputs).
(2) Considering the worst test condition, the device is tested without any filter capacitors on VBB and VOUT.
(3) The GND pin network is a 4.7kΩ resistor in parallel with a diode BAS21-7-F.
(4) Status II: The function does not perform as designed during the test, but returns automatically to normal operation after the test.
(5) Select a 36V external suppressor.