SLVSHX5A July   2025  – December 2025 TPS2HC08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Accurate Current Sense
        1. 8.3.1.1 SNS Response Time
        2. 8.3.1.2 SNS Output Filter
        3. 8.3.1.3 Multiplexing of Current Sense Across Channels
        4. 8.3.1.4 Multiplexing of Current Sense Across Devices
      2. 8.3.2  Overcurrent Protection
        1. 8.3.2.1 Adjustable Current Limit
          1. 8.3.2.1.1 Current Limiting With Thermal Regulation
          2. 8.3.2.1.2 Current Limiting With No Thermal Regulation
          3. 8.3.2.1.3 Current Limit Foldback
          4. 8.3.2.1.4 Current Limit Accuracy
        2. 8.3.2.2 Thermal Shutdown
          1. 8.3.2.2.1 Relative Thermal Shutdown
          2. 8.3.2.2.2 Absolute Thermal Shutdown
      3. 8.3.3  Retry Protection Mechanism From Thermal Shutdown
        1. 8.3.3.1 Reliable Switch-On Behavior
      4. 8.3.4  Inductive-Load Switching-Off Clamp
      5. 8.3.5  Slower Slew Rate Option
      6. 8.3.6  Capacitive Load Charging
        1. 8.3.6.1 Adjustable Current Limiting for Inrush Control
        2. 8.3.6.2 Current Limit with Thermal Regulation for Capacitive Loads
        3. 8.3.6.3 Retry Thermal Shutdown Behavior for Capacitive Loads
        4. 8.3.6.4 Impact of DC Load on Capacitive Charging Capability
        5. 8.3.6.5 Device Capability
      7. 8.3.7  Bulb Charging
        1. 8.3.7.1 Non-Thermal Regulated Mode for Bulb Loads
        2. 8.3.7.2 Thermal Management During Bulb Inrush
        3. 8.3.7.3 Device Capability
      8. 8.3.8  Fault Detection and Reporting
        1. 8.3.8.1 Diagnostic Enable Function
        2. 8.3.8.2 FLT Reporting
        3. 8.3.8.3 FLT Timings
        4. 8.3.8.4 Fault Table
      9. 8.3.9  Full Diagnostics
        1. 8.3.9.1 Open-Load Detection
          1. 8.3.9.1.1 Channel On
          2. 8.3.9.1.2 Channel Off
        2. 8.3.9.2 Short-to-Battery Detection
        3. 8.3.9.3 Reverse-Polarity and Battery Protection
      10. 8.3.10 Full Protections
        1. 8.3.10.1 UVLO Protection
        2. 8.3.10.2 Loss of GND Protection
        3. 8.3.10.3 Loss of Power Supply Protection
        4. 8.3.10.4 Reverse Current Protection
        5. 8.3.10.5 Protection for MCU I/Os
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 EMC Transient Disturbances Test
      3. 9.2.3 Transient Thermal Performance
      4. 9.2.4 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Wettable Flank Package
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.7 Switching Characteristics

VBB = 13.5V, RL = 10Ω, TJ = –40°C to +150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tDR Channel Turn-on delay time 50% of ENx to 20% of VOUTx 
from standby state		 6 12 30 µs
50% of ENx to 20% of VOUTx
from sleep state		 10 45 70 µs
tDF Channel Turn-off delay time 50% of ENx to 80% of VOUTx 35 80 121 µs
SRR VOUT rising slew rate 20% to 80% of VOUTx (version = D, B) 0.02 0.06 0.1 V/µs
20% to 80% of VOUTx (version = P, M) 0.3 0.45 0.65 V/µs
SRF VOUT falling slew rate 80% to 20% of VOUTx (version = D, B) 0.02 0.06 0.1 V/µs
80% to 20% of VOUTx (version = P, M) 0.3 0.5 0.7 V/µs
tON Channel Turn-on time 50% of EN to 80% of VOUT,
from sleep state		 35 60 110 µs
50% of EN to 80% of VOUT,
from standby state		 15 30 90 µs
tOFF Channel Turn-off time 50% of EN to 20% of VOUT 50 90 130 µs
tON – tOFF Turn-on and off matching(1) 1ms enable pulse –75 40 µs
200µs enable pulse -90 40 µs
ΔPWM PWM accuracy - average load current(1) 200µs enable pulse (1ms period) –45 25 %
≤500Hz, 50% Duty cycle  –12 12 %
EON Switching energy losses during turn-on VBB = 18V, RL = 3.3Ω, 0% to 100% of VOUT 0.63 mJ
VBB = 18V, RL = 3.3Ω, 10% to 90% of VOUT 0.59 mJ
EOFF Switching energy losses during turn-off VBB = 18V, RL = 3.3Ω, 100% to 0% of VOUT 0.77 mJ
VBB = 18V, RL = 3.3Ω, 90% to 10% of VOUT 0.67 mJ
(1) Parameter specified by design; not subject to production test.