SLVSHX5A July   2025  – December 2025 TPS2HC08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Accurate Current Sense
        1. 8.3.1.1 SNS Response Time
        2. 8.3.1.2 SNS Output Filter
        3. 8.3.1.3 Multiplexing of Current Sense Across Channels
        4. 8.3.1.4 Multiplexing of Current Sense Across Devices
      2. 8.3.2  Overcurrent Protection
        1. 8.3.2.1 Adjustable Current Limit
          1. 8.3.2.1.1 Current Limiting With Thermal Regulation
          2. 8.3.2.1.2 Current Limiting With No Thermal Regulation
          3. 8.3.2.1.3 Current Limit Foldback
          4. 8.3.2.1.4 Current Limit Accuracy
        2. 8.3.2.2 Thermal Shutdown
          1. 8.3.2.2.1 Relative Thermal Shutdown
          2. 8.3.2.2.2 Absolute Thermal Shutdown
      3. 8.3.3  Retry Protection Mechanism From Thermal Shutdown
        1. 8.3.3.1 Reliable Switch-On Behavior
      4. 8.3.4  Inductive-Load Switching-Off Clamp
      5. 8.3.5  Slower Slew Rate Option
      6. 8.3.6  Capacitive Load Charging
        1. 8.3.6.1 Adjustable Current Limiting for Inrush Control
        2. 8.3.6.2 Current Limit with Thermal Regulation for Capacitive Loads
        3. 8.3.6.3 Retry Thermal Shutdown Behavior for Capacitive Loads
        4. 8.3.6.4 Impact of DC Load on Capacitive Charging Capability
        5. 8.3.6.5 Device Capability
      7. 8.3.7  Bulb Charging
        1. 8.3.7.1 Non-Thermal Regulated Mode for Bulb Loads
        2. 8.3.7.2 Thermal Management During Bulb Inrush
        3. 8.3.7.3 Device Capability
      8. 8.3.8  Fault Detection and Reporting
        1. 8.3.8.1 Diagnostic Enable Function
        2. 8.3.8.2 FLT Reporting
        3. 8.3.8.3 FLT Timings
        4. 8.3.8.4 Fault Table
      9. 8.3.9  Full Diagnostics
        1. 8.3.9.1 Open-Load Detection
          1. 8.3.9.1.1 Channel On
          2. 8.3.9.1.2 Channel Off
        2. 8.3.9.2 Short-to-Battery Detection
        3. 8.3.9.3 Reverse-Polarity and Battery Protection
      10. 8.3.10 Full Protections
        1. 8.3.10.1 UVLO Protection
        2. 8.3.10.2 Loss of GND Protection
        3. 8.3.10.3 Loss of Power Supply Protection
        4. 8.3.10.4 Reverse Current Protection
        5. 8.3.10.5 Protection for MCU I/Os
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 EMC Transient Disturbances Test
      3. 9.2.3 Transient Thermal Performance
      4. 9.2.4 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Wettable Flank Package
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.6 SNS Timing Characteristics

VBB = 6V to 18V, VENx = 5V, VDIAG_EN = 5V, RSNS = 1kΩ, TJ = –40°C to +150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SNS TIMING - CURRENT SENSE
tSNSION1 Settling time from rising edge of DIAG_EN VDIAG_EN = 0V to 5V, IOUTx = 1A 20 µs
VDIAG_EN = 0V to 5V, IOUTx = 50mA 20 µs
tSNSION2 Settling time from rising edge of EN and DIAG_EN,  50% of VDIAG_EN, VEN to 90% of ISNS VEN = VDIAG_EN = 0V to 5V, IOUTx = 1A 170 µs
VEN = VDIAG_EN = 0V to 5V, IOUTx = 50mA 170
tSNSION3 Settling time from rising edge of EN with DIAG_EN = 5V, 50% of VEN to 90% of ISNS VENx = 0V to 5V, VDIAG_EN = 5V, IOUTx = 1A 110 µs
tSNSIOFF Settling time from falling edge of DIAG_EN, 50% of VDIAG_EN to 5% of ISNS VENx = 5V, VDIAG_EN = 5V to 0V , IOUTx = 1A 10 µs
tSETTLEH Settling time from rising edge of load step IOUTx = 50mA to 1A 20 µs
tSETTLEL Settling time from falling edge of load step IOUTx = 1A to 50mA 20 µs
tMUX1 Settling time from switching from CHx to CHy VSEL = 0V to 5V, IOUT1 = 50mA, IOUT2 = 1A 20 µs
tMUX2 Settling time from switching from CHx to CHy with any fault VEN1 = 5V, VEN2 = 0V, VSEL = 0V to 5V, IOUT1 = 1A, CH2 = ISNSFH 20 µs