TIDUF75 April   2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 System Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1  Determining the Number of eFuse Devices to use in Parallel
      2. 2.2.2  Setting up the Primary and Secondary Devices in a Parallel Configuration
      3. 2.2.3  Selecting the CDVDT Capacitor to Control the Output Slew Rate and Start-Up Time
      4. 2.2.4  Selecting the RIREF Resistor to set the Reference Voltage for Overcurrent Protection and Active Current Sharing
      5. 2.2.5  Selecting the RIMON Resistor to set the Overcurrent (Circuit Breaker) and Fast-Trip Thresholds During Steady-State
      6. 2.2.6  Selecting the RILIM Resistor to set the Current Limit and Fast-Trip Thresholds During Start-Up and the Active Sharing Threshold During Steady-State
      7. 2.2.7  Selecting the CITIMER Capacitor to Set the Overcurrent Blanking Timer
      8. 2.2.8  Selecting the Resistors to set the Under-voltage Lockout Threshold
      9. 2.2.9  Selecting the R-C Filter Between VIN and VDD
      10. 2.2.10 Selecting the Pullup Resistors and Power Supplies for SWEN, PG, FLT, and CMPOUT Pins
      11. 2.2.11 TVS Diode Selection at Input and Schottky Diode Selection at Output
      12. 2.2.12 Selecting CIN and COUT
    3. 2.3 Highlighted Products
      1. 2.3.1 TPS25985
      2. 2.3.2 LM94022 and LM94022-Q1
      3. 2.3.3 INA241x
      4. 2.3.4 TLV760
      5. 2.3.5 SN74LVC1G123
      6. 2.3.6 UCC27511A
      7. 2.3.7 CSD18510Q5B
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1.      36
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 Bill of Materials
      3. 4.1.3 Altium Project
      4. 4.1.4 Gerber Files
    2. 4.2 Tools
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Author

3.3 Test Results

Table 3-1 and Table 3-2 summarize the experimental results.

Table 3-1 Experimental Results Captured on TIDA-050077
BOARD CONFIGURATIONNAME OF THE EXPERIMENTTEST CONDITIONSFIGURE NUMBER
Four Devices in Parallel: Two devices on the top layer and two devices on the bottom layerInput hot-plugVIN stepped up from 0V to 12V, COUT = 26mF, CDVDT = 33nF, RILIM (each device)= 365Ω, RIREF = 40.2kΩ, and RLOAD = 1ΩFigure 3-9
Power-up using ENABLEVIN = 12V, EN stepped up from 0V to 3V, COUT = 58mF, CDVDT = 33nF, RILIM (each device)= 365Ω, RIREF = 40.2kΩ, and RLOAD = 0.2ΩFigure 3-10
Current sharing among the devices during power-upVIN = 12V, EN stepped up from 0V to 3V, COUT = 58mF, CDVDT = 33nF, RILIM (each device)= 365Ω, RIREF = 40.2kΩ, and RLOAD = 0.15ΩFigure 3-11
Power-up into output short to groundVIN = 12V, EN stepped up from 0V to 3V, RILIM (each device)= 464Ω, RIREF = 40.2kΩ, and OUT shorted to PGNDFigure 3-12
Current sharing among the devices during power-up into output short to groundVIN = 12V, EN stepped up from 0V to 3V, RILIM (each device)= 464Ω, RIREF = 40.2kΩ, and OUT shorted to PGNDFigure 3-13
Persistent overcurrent protection

VIN = 12V, tITIMER = 16ms, COUT = 58mF, RIMON = 249Ω, RIREF = 40.2kΩ, and IOUT ramped from 200A to 350A for 100ms then 200A

Captured signals: VIN, VOUT, ITIMER, and IIN

Figure 3-14
VIN = 12V, tITIMER = 16ms, COUT = 58mF, RIMON = 249Ω, RIREF = 40.2kΩ, and IOUT ramped from 200A to 350A for 100ms then 200A

Captured signals: VIREF, VIMON, ITIMER, and IIN

Figure 3-15
Transient overcurrent blankingVIN = 12V, tITIMER = 16ms, COUT = 58mF, RIMON = 249Ω, RIREF = 40.2kΩ, and IOUT ramped from 200A for 10ms to 350A for 10ms then 200A for 10ms

Captured signals: VIN, VOUT, ITIMER, and IIN

Figure 3-16
VIN = 12V, tITIMER = 16ms, COUT = 58mF, RIMON = 249Ω, RIREF = 40.2kΩ, and IOUT ramped from 200A for 10ms to 350A for 10ms then 200A for 10ms

Captured signals: VIREF, VIMON, ITIMER, and IIN

Figure 3-17
Current sharing among the devices during persistent over-loadVIN = 12V, tITIMER = 16ms, COUT = 58mF, RIMON = 249Ω, RIREF = 40.2kΩ, and IOUT ramped from 200A to 350A for 100ms then 200AFigure 3-18
Current sharing among the devices during transient overloadVIN = 12V, tITIMER = 16ms, COUT = 58mF, RIMON = 249Ω, RIREF = 40.2kΩ, and IOUT ramped from 200A for 10ms to 350A for 10ms then 200A for 10msFigure 3-19
Active current sharing during load transientsVIN = 12V, COUT = 58mF, RIMON = 167Ω, RIREF = 40.2kΩ, RILIM (each device)= 365Ω, and IOUT ramped from 0A to 200A in 100ms then ramped to 330A in 100ms and then ramped down to 200A in 100msFigure 3-20
Active current sharing during steady-stateVIN = 12V, COUT = 58mF, RIMON = 167Ω, RIREF = 40.2kΩ, RILIM (each device)= 365Ω, and IOUT = 260AFigure 3-21
Output hot-shortVIN = 12V, COUT = 58mF, RIMON = 249Ω, RIREF = 40.2kΩ, and

OUT is connected to PGND under steady-state.

Figure 3-22
Six Devices In Parallel: Four devices on the top layer and two devices on the bottom layerPower-up using ENABLEVIN = 12V, EN stepped up from 0V to 3V, COUT = 95mF, CDVDT = 33nF, RILIM (each device)= 365Ω, RIREF = 40.2kΩ, and RLOAD = 0.15ΩFigure 3-23
Power-up into output short to groundVIN = 12V, EN stepped up from 0V to 3V, RILIM (each device)= 365Ω, RIREF = 40.2kΩ, and OUT shorted to PGNDFigure 3-24
Transient overcurrent blankingVIN = 12V, tITIMER = 16ms, COUT = 95mF, RIMON = 167Ω, RIREF = 40.2kΩ, and IOUT ramped from 300A for 10ms to 500A for 10ms then 300A for 10msFigure 3-25
Persistent overcurrent protectionVIN = 12V, tITIMER = 16ms, COUT = 95mF, RIMON = 167Ω, RIREF = 40.2kΩ, and IOUT ramped from 300A to 500A for 100ms then 300AFigure 3-26
Table 3-2 Thermal Performance of the TIDA-050077 Reference Design
BOARD CONFIGURATIONTEST CONDITIONSTHERMAL IMAGE CAPTUREDFIGURE NUMBER
Four Devices in Parallel: All devices on the top layer.VIN = 12V, IOUT = 200A, and no external airflowTop LayerFigure 3-27
Four Devices in Parallel: Two devices on the top layer and the other two devices on the bottom layer at exactly the same location as the top layer devices.VIN = 12V, IOUT = 200A, and no external airflowTop LayerFigure 3-28
Bottom LayerFigure 3-29
Six Devices in Parallel: Four devices on the top layer and the other two devices on the bottom layer at exactly the same locations as the second and third devices on the top layer.VIN = 12V, IOUT = 300A, and no external airflowTop LayerFigure 3-30
Bottom LayerFigure 3-31