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LM5109A

ACTIVE

1-A, 100-V half bridge gate driver with 8-V UVLO

A newer version of this product is available

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LM2101 ACTIVE 107-V, 0.5-A/0.8-A half-bridge gate driver with 8-V UVLO Newer device with similar electrical characteristics

Product details

Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
WSON (NGT) 8 16 mm² (4 mm × 4 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1A peak Output Current (1.0A Sink / 1.0A Source)
  • Independent TTL Compatible Inputs
  • Bootstrap Supply Voltage to 108V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000 pF Load with 15ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Pin Compatible with ISL6700
  • Industry Standard SOIC-8 and Thermally Enhanced WSON-8 Package
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1A peak Output Current (1.0A Sink / 1.0A Source)
  • Independent TTL Compatible Inputs
  • Bootstrap Supply Voltage to 108V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000 pF Load with 15ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Pin Compatible with ISL6700
  • Industry Standard SOIC-8 and Thermally Enhanced WSON-8 Package

The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.

The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.

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Similar products you might be interested in

open-in-new Compare alternates
Drop-in replacement with upgraded functionality to the compared device.
LM5109B ACTIVE 1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity Newer version with the same electrical characteristics
Pin-for-pin with same functionality to the compared device.
LM2105 ACTIVE 107-V 0.5-A/0.8-A half-bridge gate driver with 5-V UVLO and integrated bootstrap diode More recent product with an integrated bootstrap diode

Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LM5109A High Voltage 1A Peak Half Bridge Gate Driver datasheet (Rev. C) PDF | HTML Sep 23, 2016
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML Jan 24, 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) Apr 7, 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. May 12, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives Oct 22, 2019
Application note Maximizing DC/DC converter designs with UCC27282 Jan 18, 2019
Application note UCC27282 Improving motor drive system robustness Jan 11, 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) Oct 29, 2018
Application note AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B) May 4, 2018

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TIDA-00476 — Highly Efficient, Versatile Bi-Directional Power Converter for Energy Storage and DC Home Solutions

TIDA-00476 is comprised of a single DC-DC power stage, which can work as a synchronous buck converter or a synchronous boost converter, enabling bidirectional power flow between DC power source and energy storage system. Operating in synchronous buck mode, the system works as a MPPT controlled (...)

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WSON (NGT) 8 Ultra Librarian
SOIC (D) 8 Ultra Librarian

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