Product details

Vin (Min) (V) 3 Vin (Max) (V) 65 Number of channels (#) 1 Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (Typ) (mA) 0.032 Iq (Max) (mA) 0.038 FET External single FET, External back-to-back FET IGate sink (Typ) (mA) 2.1 IGate pulsed (Typ) (A) 2.1 Operating temperature range (C) -40 to 125 VSense reverse (Typ) (mV) -6.5 Design support EVM Rating Automotive VGS (Max) (V) 13
Vin (Min) (V) 3 Vin (Max) (V) 65 Number of channels (#) 1 Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (Typ) (mA) 0.032 Iq (Max) (mA) 0.038 FET External single FET, External back-to-back FET IGate sink (Typ) (mA) 2.1 IGate pulsed (Typ) (A) 2.1 Operating temperature range (C) -40 to 125 VSense reverse (Typ) (mV) -6.5 Design support EVM Rating Automotive VGS (Max) (V) 13
WSON (DRR) 12 9 mm² 3 x 3
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Low quiescent current 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 13-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 30-mA boost regulator
  • Active rectification up to 200 kHz
  • Fast response to reverse current blocking: 0.5 µs
  • Fast forward GATE turn ON delay: 0.72 µs
  • Adjustable overvoltage protection
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-pin WSON package
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Low quiescent current 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 13-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 30-mA boost regulator
  • Active rectification up to 200 kHz
  • Fast response to reverse current blocking: 0.5 µs
  • Fast forward GATE turn ON delay: 0.72 µs
  • Adjustable overvoltage protection
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-pin WSON package

The LM74722-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn-ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing, such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 200-kHz frequency. Low quiescent current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff or overvoltage clamp protection using OV pin.

The LM74722-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn-ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing, such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 200-kHz frequency. Low quiescent current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff or overvoltage clamp protection using OV pin.

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Evaluation board

LM7472EVM — LM74720-Q1 and LM74722-Q1 evaluation module for ideal diode controllers

TI's Evaluation Module LM7472EVM helps designers evaluate the operation and performance of the LM74720-Q1 and LM74722-Q1 ideal diode controllers in reverse battery protection applications. This evaluation module demonstrates how LM7472x-Q1 with integrated boost regulator for Low Iand fast (...)

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Simulation model

LM7472x-Q1 PSpice Transient Model

SLVMDO2.ZIP (84 KB) - PSpice Model
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PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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