Product details

Vin (Min) (V) 3 Vin (Max) (V) 65 Features Linear control, Reverse polarity protection, Reverse current blocking Iq (Typ) (mA) 0.412 Iq (Max) (mA) 0.495 IGate source (Typ) (uA) 20000 IGate sink (Typ) (mA) 2670 IGate pulsed (Typ) (A) 2.6 Operating temperature range (C) -40 to 125 VSense reverse (Typ) (mV) -4.5 Design support EVM, Simulation Model Rating Automotive Channel(s) controlled (#) 2 FET External VGS (Max) (V) 15
Vin (Min) (V) 3 Vin (Max) (V) 65 Features Linear control, Reverse polarity protection, Reverse current blocking Iq (Typ) (mA) 0.412 Iq (Max) (mA) 0.495 IGate source (Typ) (uA) 20000 IGate sink (Typ) (mA) 2670 IGate pulsed (Typ) (A) 2.6 Operating temperature range (C) -40 to 125 VSense reverse (Typ) (mV) -4.5 Design support EVM, Simulation Model Rating Automotive Channel(s) controlled (#) 2 FET External VGS (Max) (V) 15
WSON (DRR) 12 9 mm² 3 x 3
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common drain and common source configurations
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800-Q1)
  • Low reverse detection threshold (–4.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turnon current
  • 2.6-A peak DGATE turnoff current
  • Adjustable overvoltage protection
  • Low 2.87-µA shutdown current (EN/UVLO=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-Pin WSON package
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common drain and common source configurations
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800-Q1)
  • Low reverse detection threshold (–4.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turnon current
  • 2.6-A peak DGATE turnoff current
  • Adjustable overvoltage protection
  • Low 2.87-µA shutdown current (EN/UVLO=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-Pin WSON package

The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology.

The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology.

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Technical documentation

Design & development

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Evaluation board

LM74800EVM-CD — LM74800-Q1 ideal diode controller evaluation module

TI's Evaluation Module LM74800EVM-CD helps designers evaluate the operation and performance of the LM7480-Q1 ideal diode controllers (LM74800QDRR and LM74801QDRR) in reverse battery protection applications. This evaluation module demonstrates how LM7480-Q1 controls two back-back N-channel power (...)

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Evaluation board

LM74800EVM-CS — LM7480-Q1 ideal diode controller evaluation module

TI's evaluation module LM74800EVM-CD helps designers evaluate the operation and performance of the LM7480-Q1 ideal diode controllers (LM74800QDRR and LM74801QDRR) in reverse battery protection applications. This evaluation module demonstrates how LM7480-Q1 controls two back-back N-channel power (...)

In stock
Limit: 5
Simulation model

LM74800-Q1 PSPICE Transient Model

SLVMDB8.ZIP (145 KB) - PSpice Model
Simulation model

LM74800-Q1 TINA-TI Common Drain Transient Model

SLVMDD0.TSC (407 KB) - TINA-TI Spice Model
Simulation model

LM74800-Q1 TINA-TI Common Source Transient Model

SLVMDD1.TSC (656 KB) - TINA-TI Spice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-020031 — Automotive 400-V battery to 12-V, 3.6-kW DC/DC converter reference design

This reference design is a 3.6-kW, automotive 400-V to 12-V unidirectional converter which converts the 200-V to 450-V DC input to 12-V, 300-A maximum output. Circuit breaker is applied for overcurrent and overvoltage protection. The converter is designed with SiC MOSFETs on the high voltage side (...)
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