Product details


Vin (Min) (V) 3.0 Vin (Max) (V) 65 Features Linear control Iq (Typ) (mA) 0.412 Iq (Max) (mA) 0.495 IGate source (Typ) (uA) 20000 IGate sink (Typ) (mA) 1500 IGate pulsed (Typ) (A) 2.6 Operating temperature range (C) -40 to 125 VSense reverse (Typ) (mV) -4.5 Rating Automotive Channel(s) controlled (#) 2 FET External VGS (Max) (V) 13 open-in-new Find other Ideal diode/ORing controllers

Package | Pins | Size

WSON (DRR) 12 9 mm² 3 x 3 open-in-new Find other Ideal diode/ORing controllers


  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common drain and common source configurations
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800-Q1)
  • Low reverse detection threshold (–4.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turnon current
  • 2.6-A peak DGATE turnoff current
  • Adjustable overvoltage protection
  • Low 2.87-µA shutdown current (EN/UVLO=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-Pin WSON package

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open-in-new Find other Ideal diode/ORing controllers


The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology.

open-in-new Find other Ideal diode/ORing controllers

Technical documentation

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Type Title Date
* Datasheet LM7480-Q1 Ideal Diode Controller with Load Dump Protection datasheet (Rev. C) Dec. 08, 2020
User guide LM74800 Evaluation Module: LM74800EVM-CD (Rev. A) Oct. 16, 2020
Application note Automotive EMC-compliant reverse-battery protection with ideal-diode controllers Sep. 22, 2020
Application note Ideal Diode Controllers for Active Rectification of AC Voltage Ripple Jun. 30, 2020
Application note Single Point Failure Protection for Motor Drives and PLC Systems Jun. 30, 2020
White paper Streamlining Functional Safety Certification in Automotive and Industrial Jun. 09, 2020
White paper 簡化汽車及工業領域的功 能安全認證 Jun. 09, 2020
White paper 자동차 및 산업 분야의 기능적 안전성 인증 간소화 Jun. 09, 2020
Application note Six System Architectures With Robust Reverse Battery Protection Using an Ideal D Apr. 30, 2020
Application note Basics of Ideal Diodes May 09, 2019

Design & development

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Hardware development


TI's Evaluation Module LM74800EVM-CD helps designers evaluate the operation and performance of the LM7480-Q1 ideal diode controllers (LM74800QDRR and LM74801QDRR) in reverse battery protection applications. This evaluation module demonstrates how LM7480-Q1 controls two back-back N-channel power (...)

  • Reverse battery protection
  • Switched output and power path cut-off
  • Over voltage protection
  • Meets automotive transient immunity test requirements
  • Two external N-Channel MOSFETs connected back-back in common drain configuration

Design tools & simulation

SLVMDB8.ZIP (145 KB) - PSpice Model
SLVMDD0.TSC (407 KB) - TINA-TI Spice Model
SLVMDD1.TSC (656 KB) - TINA-TI Spice Model
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SON (DRR) 12 View options

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