TPS7H1210-SEP

AKTIV

Negativer Linearregler, strahlungstolerant, -3 V bis -16,5 V Eingangsspannung, 1 A, in räumlich verb

Produktdetails

Output options Adjustable Output, Negative Output Iout (max) (A) 1 Vin (max) (V) -3 Vin (min) (V) -16.5 Vout (max) (V) -1.2 Vout (min) (V) -15.5 Noise (µVrms) 13.7 Iq (typ) (mA) 0.21 Thermal resistance θJA (°C/W) 32.7 Rating Space Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Features Enable, Soft start Accuracy (%) 2 PSRR at 100 KHz (dB) 61 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
Output options Adjustable Output, Negative Output Iout (max) (A) 1 Vin (max) (V) -3 Vin (min) (V) -16.5 Vout (max) (V) -1.2 Vout (min) (V) -15.5 Noise (µVrms) 13.7 Iq (typ) (mA) 0.21 Thermal resistance θJA (°C/W) 32.7 Rating Space Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Features Enable, Soft start Accuracy (%) 2 PSRR at 100 KHz (dB) 61 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
VQFN (RGW) 20 25 mm² 5 x 5
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet TPS7H1210-SEP –16.5-V, 1-A, Negative Linear Regulator in Space Enhanced Plastic datasheet PDF | HTML 23 Nov 2021
* VID TPS7H1210-SEP VID V62-21616 04 Jan 2022
* Radiation & reliability report TPS7H1210-SEP Single-Event Effects (SEE) Test Report 13 Dez 2021
* Radiation & reliability report TPS7H1210-SEP Neutron Displacement Damage (NDD) Characterization 24 Nov 2021
* Radiation & reliability report TPS7H1210-SEP Total Ionizing Dose (TID) 24 Nov 2021
* Radiation & reliability report TPS7H1210-SEP Production Flow and Reliability Report PDF | HTML 08 Nov 2021
Technical article How Space Enhanced Products Address Challenges in low Earth orbit Applications (Rev. A) PDF | HTML 18 Dez 2023
White paper Parallel LDO Architecture Design Using Ballast Resistors PDF | HTML 14 Dez 2022
White paper Comprehensive Analysis and Universal Equations for Parallel LDO's Using Ballast PDF | HTML 13 Dez 2022
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 15 Sep 2022
Selection guide TI Space Products (Rev. I) 03 Mär 2022
User guide TPS7H1210EVM User's Guide PDF | HTML 22 Nov 2021
Certificate TPS7H1210EVM EU RoHS Declaration of Conformity (DoC) 04 Okt 2021
E-book Radiation Handbook for Electronics (Rev. A) 21 Mai 2019

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

TPS7H1210EVM — TPS7H1210-SEP-Evaluierungsmodul für Negativ-Linear-Spannungsregler, -3 bis -16,5 V Eingangsspannung,

Das TPS7H1210-Evaluierungsmodul (EVM) ist eine technische Demoplatine zur Evaluierung des platzoptimierten LDO-Reglers TPS7H1210-SEP mit geringer Dropout-Spannung.

Benutzerhandbuch: PDF | HTML
Simulationsmodell

TPS7H1210-SEP PSpice Transient Model

SBVM985.ZIP (23 KB) - PSpice Model
Referenzdesigns

TIDA-010274 — Space-grade discrete RF sampling transceiver reference design

This reference design incorporates a 10 GSPS dual digital-to-analog converter and a 5 GSPS dual analog-to-digital converter with active baluns on the RF interface supporting up through X-band. The design also incorporates a space-grade clocking daughter card and a space-grade power solution (...)
Design guide: PDF
Gehäuse Pins Herunterladen
VQFN (RGW) 20 Optionen anzeigen

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
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  • Montagestandort

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