The LMG1020 device is a single, low-side driver designed for driving GaN FETs and
logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition,
and any power converters involving low side drivers. The design simplicity of the LMG1020 enables
extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The
drive strength is independently adjustable for the pull-up and pull-down edges by connecting
external resistors between the gate and OUTH and OUTL, respectively.
The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in
the event of overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes
power density in high-frequency applications.
The LMG1020 device is a single, low-side driver designed for driving GaN FETs and
logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition,
and any power converters involving low side drivers. The design simplicity of the LMG1020 enables
extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The
drive strength is independently adjustable for the pull-up and pull-down edges by connecting
external resistors between the gate and OUTH and OUTL, respectively.
The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in
the event of overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes
power density in high-frequency applications.