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Gestión de la energía
Controladores de compuertas
Drivers del lado de tierra

UCC27611

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Controlador de puerta monocanal de 4 A/6 A con UVLO de 4 V y salida regulada de 5 V

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UCC27611

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Detalles del producto

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 6 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 18 Features Regulated gate driver voltage, Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 4 Propagation delay time (µs) 0.014 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Low Side
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 6 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 18 Features Regulated gate driver voltage, Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 4 Propagation delay time (µs) 0.014 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Low Side
WSON (DRV) 6 4 mm² 2 x 2
  • Enhancement Mode Gallium Nitride FETs (eGANFETs)
  • 4-V to 18-V Single Supply Range VDD Range
  • Drive Voltage VREF Regulated to 5 V
  • 4-A Peak Source and 6-A Peak Sink Drive Current
  • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity)
  • Split Output Configuration (Allows Turnon and Turnoff Optimization for Individual FETs)
  • Fast Propagation Delays (14-ns Typical)
  • Fast Rise and Fall Times (9-ns and 5-ns Typical)
  • TTL and CMOS Compatible Inputs (Independent of Supply Voltage Allow Easy Interface-to-Digital and Analog Controllers)
  • Dual-Input Design Offering Drive Flexibility (Both Inverting and Noninverting Configurations)
  • Output Held Low When Inputs Are Floating
  • VDD Under Voltage Lockout (UVLO)
  • Optimized Pinout Compatible With eGANFET Footprint for Easy Layout
  • 2.00 mm × 2.00 mm SON-6 Package With Exposed Thermal and Ground Pad, (Minimized Parasitic Inductances to Reduce Gate Ringing)
  • Operating Temperature Range of –40°C to 140°C
  • Enhancement Mode Gallium Nitride FETs (eGANFETs)
  • 4-V to 18-V Single Supply Range VDD Range
  • Drive Voltage VREF Regulated to 5 V
  • 4-A Peak Source and 6-A Peak Sink Drive Current
  • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity)
  • Split Output Configuration (Allows Turnon and Turnoff Optimization for Individual FETs)
  • Fast Propagation Delays (14-ns Typical)
  • Fast Rise and Fall Times (9-ns and 5-ns Typical)
  • TTL and CMOS Compatible Inputs (Independent of Supply Voltage Allow Easy Interface-to-Digital and Analog Controllers)
  • Dual-Input Design Offering Drive Flexibility (Both Inverting and Noninverting Configurations)
  • Output Held Low When Inputs Are Floating
  • VDD Under Voltage Lockout (UVLO)
  • Optimized Pinout Compatible With eGANFET Footprint for Easy Layout
  • 2.00 mm × 2.00 mm SON-6 Package With Exposed Thermal and Ground Pad, (Minimized Parasitic Inductances to Reduce Gate Ringing)
  • Operating Temperature Range of –40°C to 140°C

The UCC27611 is a single-channel, high-speed, gate driver optimized for 5-V drive, specifically addressing enhancement mode GaN FETs. The drive voltage VREF is precisely controlled by internal linear regulator to 5 V. The UCC27611 offers asymmetrical rail-to-rail peak current drive capability with 4-A source and 6-A sink. Split output configuration allows individual turnon and turnoff time optimization depending on FET. Package and pinout with minimum parasitic inductances reduce the rise and fall time and limit the ringing. Additionally, the short propagation delay with minimized tolerances and variations allows efficient operation at high frequencies. The 1-Ω and 0.35-Ω resistance boosts immunity to hard switching with high slew rate dV and dt.

The independence from VDD input signal thresholds ensure TTL and CMOS low-voltage logic compatibility. For safety reason, when the input pins are in a floating condition, the internal input pullup and pulldown resistors hold the output LOW. Internal circuitry on VREF pin provides an undervoltage lockout function that holds output LOW until VREF supply voltage is within operating range. UCC27611 is offered in a small 2.00 mm × 2.00 mm SON-6 package (DRV) with exposed thermal and ground pad that improves the package power-handling capability. The UCC27611 operates over wide temperature range from –40°C to 140°C.

The UCC27611 is a single-channel, high-speed, gate driver optimized for 5-V drive, specifically addressing enhancement mode GaN FETs. The drive voltage VREF is precisely controlled by internal linear regulator to 5 V. The UCC27611 offers asymmetrical rail-to-rail peak current drive capability with 4-A source and 6-A sink. Split output configuration allows individual turnon and turnoff time optimization depending on FET. Package and pinout with minimum parasitic inductances reduce the rise and fall time and limit the ringing. Additionally, the short propagation delay with minimized tolerances and variations allows efficient operation at high frequencies. The 1-Ω and 0.35-Ω resistance boosts immunity to hard switching with high slew rate dV and dt.

The independence from VDD input signal thresholds ensure TTL and CMOS low-voltage logic compatibility. For safety reason, when the input pins are in a floating condition, the internal input pullup and pulldown resistors hold the output LOW. Internal circuitry on VREF pin provides an undervoltage lockout function that holds output LOW until VREF supply voltage is within operating range. UCC27611 is offered in a small 2.00 mm × 2.00 mm SON-6 package (DRV) with exposed thermal and ground pad that improves the package power-handling capability. The UCC27611 operates over wide temperature range from –40°C to 140°C.
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Documentación técnica

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* Data sheet UCC27611 5-V, 4-A to 6-A Low Side GaN Driver datasheet (Rev. F) PDF | HTML 12 mar 2018
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 ago 2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 ago 2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 ago 2022
Application brief External Gate Resistor Selection Guide (Rev. A) 28 feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 oct 2018
Application brief Enable Function with Unused Differential Input 11 jul 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 jun 2018
Technical article How to achieve higher system efficiency- part two: high-speed gate drivers PDF | HTML 31 ene 2017
White paper A comprehensive methodology to qualify the reliability of GaN products 02 mar 2015
White paper Advancing Power Supply Solutions Through the Promise of GaN 24 feb 2015
EVM User's guide Using the UCC27611OLEVM-203 29 nov 2012

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LMG1020EVM-006 — Módulo de evaluación LMG1020 de controlador de lado bajo GaN + GaN FET LiDAR

The LMG1020EVM-006 is a small, easy-to-use power stage for LIDAR laser drive. The EVM includes an integrated resistive load, (laser not included) and takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage. The board can demonstrate (...)
Guía del usuario: PDF
No disponible en TI.com
Placa de evaluación

UCC27611OLEVM-203 — Módulo de evaluación UCC27611 de circuito abierto de controlador de puertas

The UCC27611OLEVM-203 aids in the evaluation of high-speed, single channel, low-side driver capable of driving eGANFETs with a regulated 5-V optimized output. The EVM is designed to drive a capacitive load on the output of the UCC27611 device, with connectors provided to offer flexibility to bring (...)
Guía del usuario: PDF
No disponible en TI.com
Modelo de simulación

UCC27611 PSpice Transient Model (Rev. C)

SLUM339C.ZIP (45 KB) - PSpice Model
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Modelo de simulación

UCC27611 TINA-TI Transient Reference Design (Rev. E)

SLUM362E.TSC (761 KB) - TINA-TI Reference Design
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Modelo de simulación

UCC27611 TINA-TI Transient Spice Model (Rev. B)

SLUM363B.ZIP (5 KB) - TINA-TI Spice Model
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Modelo de simulación

UCC27611 Unencrypted PSpice Transient Model (Rev. B)

SLUM487B.ZIP (2 KB) - PSpice Model
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Herramienta de cálculo

SLURB16 — UCC27611 Schematic Review Template

Productos y hardware compatibles

Productos y hardware compatibles

Productos
Drivers del lado de tierra
UCC27611 — Controlador de puerta monocanal de 4 A/6 A con UVLO de 4 V y salida regulada de 5 V
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Diseños de referencia

TIDA-00785 — Diseño de referencia de controlador GaN aislado

This reference design consists of a reinforced dualchannel digital isolator, a GaN gate driver, and isolated power supplies. This compact reference design is intended to control GaN in power supplies, DC-to-DC converters, synchronous rectification, solar inverters, and motor control. An open-loop (...)
Design guide: PDF
Esquema: PDF
Diseños de referencia

PMP22951 — Puente completo con desplazamiento de fase de 54 V y 3 kW con diseño de referencia de abrazadera act

Este diseño de referencia es un convertidor de puente completo con desplazamiento de fase (PSFB) de 3 kW basado en GaN. Este diseño utiliza una abrazadera activa en el lado secundario para minimizar la tensión en los MOSFET del rectificador síncrono (SR), lo que permite el uso de MOSFET de menor (...)
Test report: PDF
Paquete Pasadores Descargar
WSON (DRV) 6 Ver opciones
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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