LM27222
- Adaptive Shoot-through Protection
- 10ns Dead Time
- 8ns Propagation Delay
- 30ns Minimum On-time
- 0.4Ω Pull-down and 0.9Ω Pull-up Drivers
- 4.5A Peak Driving Current
- MOSFET Tolerant Design
- 5µA Quiescent Current
- 30V Maximum Input Voltage in Buck Configuration
- 4V to 6.85V Operating Voltage
- SOIC-8 and WSON Packages
All trademarks are the property of their respective owners.
The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically used in synchronous buck regulators. The LM27222 takes the PWM output from a controller and provides the proper timing and drive levels to the power stage MOSFETs. Adaptive shoot-through protection prevents damaging and efficiency reducing shoot-through currents, thus ensuring a robust design capable of being used with nearly any MOSFET. The adaptive shoot-through protection circuitry also reduces the dead time down to as low as 10ns, ensuring the highest operating efficiency. The peak sourcing and sinking current for each driver of the LM27222 is about 3A and 4.5Amps respectively with a Vgs of 5V. System performance is also enhanced by keeping propagation delays down to 8ns. Efficiency is once again improved at all load currents by supporting synchronous, non-synchronous, and diode emulation modes through the LEN pin. The minimum output pulse width realized at the output of the MOSFETs is as low as 30ns. This enables high operating frequencies at very high conversion ratios in buck regulator designs. To support low power states in notebook systems, the LM27222 draws only 5µA from the 5V rail when the IN and LEN inputs are low or floating.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 | |
|---|---|---|---|---|---|---|
| * | 데이터 시트 | LM27222 High-Speed 4.5A Synchronous MOSFET Driver datasheet (Rev. B) | 2013. 3. 7 | |||
| 애플리케이션 노트 | Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET | PDF | HTML | 2024. 3. 25 | |||
| 애플리케이션 노트 | Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) | PDF | HTML | 2023. 9. 8 | |||
| 애플리케이션 노트 | Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) | PDF | HTML | 2022. 2. 17 | |||
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020. 2. 28 | ||||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020. 2. 28 | ||||
| 추가 자료 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018. 10. 29 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| WSON (NGT) | 8 | Ultra Librarian |
주문 및 품질
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.