전력 관리 전원 보호 스위치 및 컨트롤러 이상적인 다이오드 및 오링 컨트롤러

LM74722-Q1

활성

200khz 능동 정류 및 부하 덤프 보호를 지원하는 오토모티브 저 IQ 이상적 다이오드 컨트롤러

제품 상세 정보

Vin (max) (V) 65 Vin (min) (V) 3 FET External back-to-back FET, External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.032 Iq (max) (mA) 0.038 TI functional safety category Functional Safety-Capable IGate sink (typ) (mA) 2.1 IGate pulsed (typ) (A) 2.1 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -6.5 Design support EVM VGS (max) (V) 13 Shutdown current (ISD) (mA) (A) 0.0035 Product type Ideal diode controller
Vin (max) (V) 65 Vin (min) (V) 3 FET External back-to-back FET, External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.032 Iq (max) (mA) 0.038 TI functional safety category Functional Safety-Capable IGate sink (typ) (mA) 2.1 IGate pulsed (typ) (A) 2.1 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -6.5 Design support EVM VGS (max) (V) 13 Shutdown current (ISD) (mA) (A) 0.0035 Product type Ideal diode controller
WSON (DRR) 12 9 mm² (3 mm × 3 mm)
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Low quiescent current 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 13-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 30-mA boost regulator
  • Active rectification up to 200 kHz
  • Fast response to reverse current blocking: 0.5 µs
  • Fast forward GATE turn ON delay: 0.72 µs
  • Adjustable overvoltage protection
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-pin WSON package
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Low quiescent current 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 13-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 30-mA boost regulator
  • Active rectification up to 200 kHz
  • Fast response to reverse current blocking: 0.5 µs
  • Fast forward GATE turn ON delay: 0.72 µs
  • Adjustable overvoltage protection
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-pin WSON package

The LM74722-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn-ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing, such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 200-kHz frequency. Low quiescent current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff or overvoltage clamp protection using OV pin.

The LM74722-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn-ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing, such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 200-kHz frequency. Low quiescent current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff or overvoltage clamp protection using OV pin.

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기술 자료

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* 데이터 시트 LM74722-Q1 Automotive Low IQ Ideal Diode Controller with 200-kHz Active Rectification and Load Dump Protection datasheet (Rev. B) PDF | HTML 2022. 8. 4
기술 문서 3 ways to design a low quiescent-current (Iq) automotive reverse battery protectio PDF | HTML 2021. 11. 18
애플리케이션 노트 Basics of Ideal Diodes (Rev. B) PDF | HTML 2021. 10. 5
Application brief Active Rectification and its Advantages in Automotive ECU Designs PDF | HTML 2021. 9. 29
아날로그 디자인 학술지 Automotive EMC-compliant reverse-battery protection with ideal-diode controllers 2020. 9. 22

설계 및 개발

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평가 보드

LM7472EVM — 이상적인 다이오드 컨트롤러를 위한 LM74720-Q1 및 LM74722-Q1 평가 모듈(EVM)

TI의 평가 모듈 LM7472EVM은 설계자가 역방향 배터리 보호 애플리케이션에서 LM74720-Q1 및 LM74722-Q1 이상적인 다이오드 컨트롤러의 작동 및 성능을 평가하는 데 도움이 됩니다. 이 평가 모듈(EVM)은 낮은 IQ 및 빠른 과도 응답을 위한 부스트 레귤레이터가 통합된 LM7472x-Q1이 이상적인 다이오드 MOSFET을 먼저 연결한 후 스위치 출력 및 전원 경로 차단에 두 번째 MOSFET을 연결하여 두 개의 백-백 N 채널 파워 MOSFET을 제어하는 방법을 보여줍니다.

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LM7472x-Q1 PSpice Transient Model

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