UCC27512-EP
- Low-Cost, Gate-Driver Device Offering Superior Replacement
of NPN and PNP Discrete Solutions - 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
- Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
- Fast Propagation Delays (13-ns typical)
- Fast Rise and Fall Times (9-ns and 7-ns typical)
- 4.5-V to 18-V Single Supply Range
- Outputs Held Low During VDD UVLO (ensures glitch free operation at
power-up and power-down) - TTL and CMOS Compatible Input Logic Threshold,
(independent of supply voltage) - Hysteretic Logic Thresholds for High Noise Immunity
- Dual Input Design (choice of an inverting (IN- pin) or non-inverting
(IN+ pin) driver configuration)- Unused Input Pin can be Used for Enable or Disable Function
- Output Held Low when Input Pins are Floating
- Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
Bias Supply Voltage - 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package
Supports Defense, Aerospace, and Medical Applications
- Controlled Baseline
- One Assembly and Test Site
- One Fabrication Site
- Available in Military (–55°C to 125°C) Temperature Range
- Extended Product Life Cycle
- Extended Product-Change Notification
- Product Traceability
The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.
UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | Single Channel High-Speed, Low-Side Gate Driver (With 4-A/8-A Peak Source/Sink). datasheet | 2013. 6. 10 | ||
| * | 방사능 및 안정성 보고서 | UCC27512MDRSTEP Reliability Report | 2016. 2. 9 | ||
| 애플리케이션 노트 | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024. 1. 22 | ||
| 애플리케이션 노트 | Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) | PDF | HTML | 2023. 9. 8 | ||
| 애플리케이션 노트 | Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver | PDF | HTML | 2021. 11. 10 | ||
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020. 2. 28 | |||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020. 2. 28 | |||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019. 1. 18 | |||
| Application brief | Enable Function with Unused Differential Input | 2018. 7. 11 | |||
| Application brief | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018. 3. 16 |
설계 및 개발
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| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| WSON (DRS) | 6 | Ultra Librarian |
주문 및 품질
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