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LM74700-EP

現行

強化型低 IQ 理想二極體控制器

產品詳細資料

Vin (max) (V) 65 Vin (min) (V) 3.2 FET External single FET Device type Ideal diode controller Number of channels 1 Rating HiRel Enhanced Product Features Enable, Linear control, Reverse current blocking, Reverse polarity protection Imax (A) 250 Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.3 Operating temperature range (°C) -50 to 125 VSense reverse (typ) (mV) -11 Design support EVM Shutdown current (ISD) (mA) (A) 0.001 Product type Ideal diode controller
Vin (max) (V) 65 Vin (min) (V) 3.2 FET External single FET Device type Ideal diode controller Number of channels 1 Rating HiRel Enhanced Product Features Enable, Linear control, Reverse current blocking, Reverse polarity protection Imax (A) 250 Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.3 Operating temperature range (°C) -50 to 125 VSense reverse (typ) (mV) -11 Design support EVM Shutdown current (ISD) (mA) (A) 0.001 Product type Ideal diode controller
SOT-23-THN (DDF) 8 8.12 mm² (2.9 mm × 2.8 mm)
  • 3.2-V to 65-V Input range (3.9-V startup)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2.3-A peak gate turnoff current
  • Fast response to reverse current blocking: < 0.75 µs
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in 8 pin SOT-23 package 2.90 mm × 1.60 mm
  • Military temperature range –55°C to +125°C
  • One fabrication, assembly and test site
  • Extended product life cycle
  • Extended product change notification
  • Product traceability
  • 3.2-V to 65-V Input range (3.9-V startup)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2.3-A peak gate turnoff current
  • Fast response to reverse current blocking: < 0.75 µs
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in 8 pin SOT-23 package 2.90 mm × 1.60 mm
  • Military temperature range –55°C to +125°C
  • One fabrication, assembly and test site
  • Extended product life cycle
  • Extended product change notification
  • Product traceability

The LM74700-EP is an ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V and 48-V systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to Reverse Current Blocking makes the device suitable for systems with output voltage holdup requirements during power fail and input micro-short conditions.

The LM74700-EP controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700-EP helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current. The LM74700-EP is fully specified over the temperature range of TA = –55°C to +125°C.

The LM74700-EP is an ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V and 48-V systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to Reverse Current Blocking makes the device suitable for systems with output voltage holdup requirements during power fail and input micro-short conditions.

The LM74700-EP controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700-EP helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current. The LM74700-EP is fully specified over the temperature range of TA = –55°C to +125°C.

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LM74700-Q1 現行 3.2-V 至 65-V、80-uA IQ 車用理想二極體控制器 Automotive version, -40 C to 125 C operation

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM74700-EP Low IQ Ideal Diode Controller datasheet PDF | HTML 2021/9/1
* 輻射及可靠性報告 LM74700-EP Reliability Report PDF | HTML 2021/9/1

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LM74700DDFEVM — LM74700-Q1 3.2-V 至 65-V、80-μA IQ 車用理想二極體控制器 (DDF 封裝) 評估模組

LM74700DDFEVM 可協助設計人員評估 LM74700-Q1 3.2-V 至 65-V、80-μA IQ 車用理想二極體控制器 (DDF 封裝) 的運作和性能。此評估模組展示 N 通道功率 MOSFET 如何以流經 IC 的低 IQ 和低漏電流模擬超低順向電壓二極體。

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LM74700-Q1 PSpice Transient Model

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