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LM74700D-Q1

現行

車用 3.2-V 至 70-V、80-µA 反向電池保護理想二極體控制器

產品詳細資料

Vin (min) (V) 3.2 Vin (max) (V) 70 Number of channels 1 Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable FET External single FET IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.37 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Design support EVM, Simulation Model Rating Automotive Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3.2 Vin (max) (V) 70 Number of channels 1 Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable FET External single FET IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.37 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Design support EVM, Simulation Model Rating Automotive Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
SOIC (D) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V start-up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turn-off current
  • < 0.75-µs response to reverse current blocking
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in an 8-pin SOIC package
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V start-up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turn-off current
  • < 0.75-µs response to reverse current blocking
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in an 8-pin SOIC package

The LM74700D-Q1 is an automotive AEC Q100 qualified ideal diode controller, which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V, and 48-V automotive battery systems. The 3.2-V input voltage support is particularly well designed for severe cold crank requirements in automotive systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and makes sure of zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device designed for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions.

The LM74700D-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700D-Q1 helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current.

The LM74700D-Q1 is an automotive AEC Q100 qualified ideal diode controller, which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V, and 48-V automotive battery systems. The 3.2-V input voltage support is particularly well designed for severe cold crank requirements in automotive systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and makes sure of zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device designed for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions.

The LM74700D-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700D-Q1 helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current.

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* Data sheet LM74700D-Q1 Automotive Low IQ Reverse Battery Protection Ideal Diode Controller datasheet PDF | HTML 2022年 5月 12日

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LM74700DDFEVM — LM74700-Q1 3.2-V 至 65-V、80-μA IQ 車用理想二極體控制器 (DDF 封裝) 評估模組

The LM74700DDFEVM helps designers evaluate the operation and performance of the LM74700-Q1 3.2-V to 65-V, 80-μA IQ automotive ideal diode controller (DDF package). This evaluation module demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low IQ and (...)

使用指南: PDF | HTML
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開發板

LM74700EVM — LM74700 評估模組

The LM74700EVM helps designers evaluate the operation and performance of the LM74700-Q1 smart diode controller. This evaluation module demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low IQ and low-leakage current flowing through the IC.
使用指南: PDF
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PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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