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理想二極體與 ORing 控制器

LM74700D-Q1

現行

車用 3.2-V 至 70-V、80-µA 反向電池保護理想二極體控制器

立即訂購
產品規格表

LM74700D-Q1

現行
產品規格表 立即訂購

產品詳細資料

Vin (max) (V) 70 Vin (min) (V) 3.2 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.37 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Design support EVM, Simulation Model Shutdown current (ISD) (mA) (A) 0.001 Product type Ideal diode controller
Vin (max) (V) 70 Vin (min) (V) 3.2 FET External single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.37 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Design support EVM, Simulation Model Shutdown current (ISD) (mA) (A) 0.001 Product type Ideal diode controller
SOIC (D) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V start-up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turn-off current
  • < 0.75-µs response to reverse current blocking
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in an 8-pin SOIC package
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V start-up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turn-off current
  • < 0.75-µs response to reverse current blocking
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in an 8-pin SOIC package

The LM74700D-Q1 is an automotive AEC Q100 qualified ideal diode controller, which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V, and 48-V automotive battery systems. The 3.2-V input voltage support is particularly well designed for severe cold crank requirements in automotive systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and makes sure of zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device designed for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions.

The LM74700D-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700D-Q1 helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current.

The LM74700D-Q1 is an automotive AEC Q100 qualified ideal diode controller, which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V, and 48-V automotive battery systems. The 3.2-V input voltage support is particularly well designed for severe cold crank requirements in automotive systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and makes sure of zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device designed for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions.

The LM74700D-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700D-Q1 helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current.
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類型 標題 日期
* Data sheet LM74700D-Q1 Automotive Low IQ Reverse Battery Protection Ideal Diode Controller datasheet PDF | HTML 2022年 5月 12日
Analog Design Journal 串連理想二極體：解決 48V EV 電力挑戰 PDF | HTML 2025年 12月 30日

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LM74700DDFEVM — LM74700-Q1 3.2-V 至 65-V、80-μA IQ 車用理想二極體控制器 (DDF 封裝) 評估模組

LM74700DDFEVM 可協助設計人員評估 LM74700-Q1 3.2-V 至 65-V、80-μA IQ 車用理想二極體控制器 (DDF 封裝) 的運作和性能。此評估模組展示 N 通道功率 MOSFET 如何以流經 IC 的低 IQ 和低漏電流模擬超低順向電壓二極體。

使用指南: PDF | HTML
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LM74700EVM — LM74700 評估模組

LM74700EVM 可協助設計人員評估 LM74700-Q1 理想二極體控制器的運作及性能。此評估模組展示 N 通道功率 MOSFET 如何以流經 IC 的低 IQ 和低漏電流模擬超低順向電壓二極體。
使用指南: PDF
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