LM74910H-Q1
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Functional Safety-Capable
- 3V to 65V input range
- 74V Absolute Maximum Rating for LM74910H-Q1
- Reverse input protection down to –65V
- Drives external back-to-back N-Channel MOSFETs in common drain configuration
- Ideal diode operation with 10.5mV A to C forward voltage drop regulation
- Low reverse detection threshold (–10.5mV) with fast turn off response (0.5µs)
- 20mA peak gate (DGATE) turn on current
- 2.6A peak DGATE turnoff current
- Adjustable overcurrent and short circuit protection
- Analog current monitor output with 2% accuracy for LM74910H-Q1
- Adjustable overvoltage and undervoltage protection
- SLEEP mode OCP Retry in LM74910H-Q1
- Low 2.5µA shutdown current (EN=Low)
- SLEEP mode with 6µA current (EN=High, SLEEP=Low)
- Meets automotive ISO7637 transient requirements with a suitable TVS diode
- Available in space saving 24-pin VQFN package
The LM749x0-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12V and 24V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra-low quiescent current consumption (6µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM749x0-Q1 has a maximum voltage rating of 65V.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM749x0-Q1 Automotive Ideal Diode With Circuit Breaker, Undervoltage, and Overvoltage Protection With Fault Output datasheet (Rev. C) | PDF | HTML | 2025/8/12 | ||
| 功能安全資訊 | LM749x0-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) | PDF | HTML | 2026/3/30 |
設計與開發
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LM74900Q1EVM — 適用於理想二極體控制器的 LM74900-Q1 評估模組
在反向電池保護應用中，LM74900-Q1 評估模組可評估 LM74900-Q1 理想二極體控制器的運作及性能。此評估模組示範 LM74900-Q1 如何控制兩個背對背 N 通道電源 MOSFET，模擬具有電源路徑開/關控制、過電流和過電壓防護的理想二極體整流器。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。