TPS7H6015-SP
- Radiation performance:
- Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 1.3A peak source, 2.5A peak sink current
- Two operational modes:
- Single PWM input with adjustable dead time
- Two independent inputs
- Selectable input interlock protection in independent input mode
- Split outputs for adjustable turn-on and turn-off times
- 30ns typical propagation delay in independent input mode
- 5.5ns typical delay matching
- Plastic packages outgas tested per ASTM E595
- Available in military temperature range (–55°C to 125°C)
The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), the TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs, which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.
The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.
The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers datasheet (Rev. C) | PDF | HTML | 2025年 4月 11日 |
| * | Radiation & reliability report | TPS7H6005-SP/-SEP, TPS7H6015-SP/-SEP, TPS7H6025-SP/-SEP Neutron Displacement Damage Characterization Report (Rev. B) | 2025年 12月 5日 | |
| * | VID | TPS7H6015-SP VID TPS7H6015-SP SMD 5962-22201 | 2025年 7月 9日 | |
| * | Radiation & reliability report | TPS7H6015-SP Total Ionizing Dose (TID) Radiation Report | 2025年 4月 12日 | |
| * | Radiation & reliability report | TPS7H6005-SP, TPS7H6015-SP, TPS7H6025-SP Single-Event Effects (SEE) Report | PDF | HTML | 2025年 2月 27日 |
| Application brief | DLA Approved Optimizations for QML Products (Rev. C) | PDF | HTML | 2025年 6月 17日 | |
| Selection guide | TI Space Products (Rev. K) | 2025年 4月 4日 | ||
| Application note | QML flow, its importance, and obtaining lot information (Rev. C) | 2023年 8月 30日 |
設計與開發
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TPS7H6015EVM — TPS7H6015 評估模組
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (DCA) | 56 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
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