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半橋式驅動器

TPS7H6015-SP

現行

Radiation-hardened, QML-P, 60V half-bridge GaN gate driver

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產品規格表

TPS7H6015-SP

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 60 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 60 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
HTSSOP (DCA) 56 113.4 mm² (14 mm × 8.1 mm)
  • Radiation performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), the TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs, which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), the TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs, which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers datasheet (Rev. C) PDF | HTML 2025/4/11
* 輻射及可靠性報告 TPS7H6005-SP/-SEP, TPS7H6015-SP/-SEP, TPS7H6025-SP/-SEP Neutron Displacement Damage Characterization Report (Rev. B) 2025/12/5
* 輻射及可靠性報告 TPS7H6015-SP Total Ionizing Dose (TID) Radiation Report 2025/4/12
* 輻射及可靠性報告 TPS7H6005-SP, TPS7H6015-SP, TPS7H6025-SP Single-Event Effects (SEE) Report PDF | HTML 2025/2/27
* SMD TPS7H6015-SP SMD TPS7H6015-SP SMD 5962-22201 2026/7/7
選擇指南 TI Space Products (Rev. L) 2026/3/27
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025/6/17
應用說明 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025/6/10
技術文章 如何為具有電子電源系統的下一代衛星最佳化 SWaP (Rev. A) PDF | HTML Download English Version (Rev.A) PDF | HTML 2025/3/20
應用說明 QML flow, its importance, and obtaining lot information (Rev. C) 2023/8/30
應用說明 Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022/10/19
應用說明 DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020/8/21
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21

設計與開發

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開發板

TPS7H6015EVM — TPS7H6015 評估模組

TPS7H6015EVM 使用指南提供全方位的說明，以操作 TPS7H6015 評估模組。預設情況下，評估模組設定為以 TPS7H6015-SEP 的脈衝寬度調變模式運作，該模式接受一個切換訊號的輸入，並在內部產生互補訊號。這可變更為裝置的獨立輸入模式，在此模式中，兩個輸出彼此獨立運作。
使用指南: PDF | HTML
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模擬型號

TPS7H60x3-SP PSpice Transient Model

SNOM790.ZIP (46 KB) - PSpice 模型
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模擬型號

TPS7H60x3/TPS7H60x5 SIMPLIS Model

SNOM811.ZIP (22 KB) - SIMPLIS 模型
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參考設計

PMP23391 — 適用於 100kRad 應用的 300W、12V 輸出 ZVS 全橋式轉換器參考設計

此參考設計為全橋拓樸結構，由參考二次接地的 TPS7H5005-SEP 組成，可控制三個 TPS7H6005-SEP 半橋閘極驅動器。參考一次側的兩個驅動器以脈衝寬度調變 (PWM) 模式運作，讓設計能在高負載條件下實現零電壓切換 (ZVS)。在二次側，另一個驅動器控制一對二次整流器，以進一步提升轉換效率。在此設計中，控制器、半橋驅動器和 GaN 場效電晶體 (FET) 的選擇是為了滿足地球同步軌道 (GEO) 的輻射需求。這些元件可換出以符合其他任務規格。
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