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UCC21231

現行

具備 4A 源極和 6A 汲極的高速雙通道隔離式閘極驅動器

產品詳細資料

Number of channels 2 Isolation rating Basic Power switch GaNFET, MOSFET Withstand isolation voltage (VISO) (Vrms) 1600 Working isolation voltage (VIOWM) (Vrms) 320 Transient isolation voltage (VIOTM) (VPK) 2263 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Enable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 6.5 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5 TI functional safety category Functional Safety-Capable
Number of channels 2 Isolation rating Basic Power switch GaNFET, MOSFET Withstand isolation voltage (VISO) (Vrms) 1600 Working isolation voltage (VIOWM) (Vrms) 320 Transient isolation voltage (VIOTM) (VPK) 2263 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Enable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 6.5 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5 TI functional safety category Functional Safety-Capable
WSON (DLG) 13 16 mm² 4 x 4
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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* Data sheet UCC21231 4A Source, 6A Sink, High-Speed, Dual-Channel Isolated Gate Driver in Low-Profile SON Package datasheet (Rev. A) PDF | HTML 2024年 6月 11日

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開發板

UCC21231AEVM-108 — UCC21231A 評估模組

UCC21231AEVM-108 旨在評估 UCC21231A 閘極驅動器。UCC21231A 是一款 1.6kVrms 隔離式雙通道閘極驅動器,具備 4A 源極和 6A 汲極峰值電流,可驅動 Si MOSFET、IGBT,以及如 SiC 與 GaN 電晶體等 WBG 裝置。本使用指南提供 UCC21231A 的完整評估模組電路圖、印刷電路板佈局、物料清單、測試設定及功能說明。
使用指南: PDF | HTML
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模擬型號

UCC21231 PSpice Model

SLUM895.ZIP (199 KB) - PSpice Model
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一,涵蓋我們的類比和電源產品組合,以及特定類比行為模型,且使用無需支付費用。

PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前,建立完整的終端設備設計和解決方案原型,進而縮短上市時間並降低開發成本。 

在 PSpice for TI 設計與模擬工具中,您可以搜尋 TI (...)
參考設計

PMP23547 — GaN 式 8kW 三相圖騰柱功率因數校正和三相 LLC 參考設計

此參考設計為高密度且高效率的 8kW 電源供應器。第一個階段是三角傳導模式 (TCM) 功率因數校正 (PFC) 轉換器,接著是連接 Δ-Δ 的三相電感器 - 電感器 - 電容器 (LLC) 轉換器。兩個功率級均採用 TI 高性能氮化鎵 (GaN) 電源開關來實現。PFC 在零電流偵測 (ZCD) 架構控制機制中採用三相圖騰柱 PFC。控制方法以可變頻率運作,且可在所有操作條件下維持零電壓切換 (ZVS)。此控制透過 TMS320F280039C 高性能微控制器和含整合式 ZCD 感測的 LMG3527R030 GaN 場效應電晶體 (FET) 來執行。轉換器的運作頻率範圍約在 70kHz (...)
Test report: PDF
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WSON (DLG) 13 Ultra Librarian

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