UCC21530

現行

採用 IGBT/SiC FET 的 DWK 封裝且具有 EN 和 DT 針腳的 5.7kVrms、4A/6A 雙通道絕緣式閘極驅動器

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最新 UCC21551 現行 4A/6A 5kVRMS 雙通道隔離式閘極驅動器,配備 IGBT 與 SiC 適用的 EN 與 DT 針腳 Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

產品詳細資料

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011

The UCC21530 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

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類型 標題 日期
* Data sheet UCC21530 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver with 3.3-mm Channel-to-Channel Spacing datasheet (Rev. C) PDF | HTML 2021年 11月 9日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 2024年 1月 25日
Certificate UCC215xx CQC Certificate of Product Certification 2023年 8月 17日
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 2022年 12月 2日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
EVM User's guide Using the UCC21520EVM-286, UCC21521CEVM-286, and UCC21530EVM286 User's Guide (Rev. C) PDF | HTML 2021年 10月 21日
Certificate CSA Product Certificate (Rev. A) 2019年 8月 15日
Technical article Designing highly efficient, powerful and fast EV charging stations PDF | HTML 2019年 8月 6日

設計與開發

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開發板

UCC21530EVM-286 — UCC21530 隔離式雙通道驅動器評估模組

UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
使用指南: PDF | HTML
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模擬型號

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計

TIDA-010054 — 適合於 Level 3 電動車充電站的雙向有源電橋參考設計

此參考設計提供單相雙主動橋式 (DAB) DC/DC 轉換器實作概覽。DAB 拓撲結構提供軟切換通訊、減少裝置數量與高效率等優勢。此設計的優勢在於功率密度、成本、重量、電隔離、高電壓轉換比與可靠性,這些都是關鍵要素,因此非常適合應用於 EV 充電站和儲能。DAB 中的模組化與對稱架構可堆疊轉換器,達到高功率傳輸速率,並有利於雙向運作模式來支援電池充電與放電應用。
Design guide: PDF
電路圖: PDF
參考設計

TIDA-00366 — 具有電流、電壓和溫度保護功能的強化型隔離式三相逆變器參考設計

This reference design provides a three-phase inverter rated up to 10 kW designed using the reinforced isolated gate driver UCC21530, reinforced isolated amplifiers AMC1301 and AMC1311 and MCU TMS320F28027. Lower system cost is achieved by using the AMC1301 to measure motor current interfaced with (...)
Design guide: PDF
電路圖: PDF
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