SNVSCF4 July   2025 LM25139-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1. 4.1 Wettable Flanks
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings 
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Input Voltage Range (VIN )
      2. 6.3.2  High-Voltage Bias Supply Regulator (VCC)
      3. 6.3.3  Precision Enable (EN)
      4. 6.3.4  Power-Good Monitor (PG)
      5. 6.3.5  Switching Frequency (RT)
      6. 6.3.6  Dual Random Spread Spectrum (DRSS)
      7. 6.3.7  Soft Start
      8. 6.3.8  Output Voltage Setpoint (FB)
      9. 6.3.9  Minimum Controllable On Time
      10. 6.3.10 Error Amplifier and PWM Comparator (FB)
      11. 6.3.11 Slope Compensation
      12. 6.3.12 Inductor Current Sense (ISNS, VOUT)
        1. 6.3.12.1 Shunt Current Sensing
        2. 6.3.12.2 Inductor DCR Current Sensing
        3. 6.3.12.3 Hiccup-Mode Current Limiting
    4. 6.4 Device Functional Modes
      1. 6.4.1 Sleep Mode
      2. 6.4.2 Forced PWM and Synchronization (FPWM/SYNC)
      3. 6.4.3 Thermal Shutdown
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Power Train Components
        1. 7.1.1.1 Buck Inductor
        2. 7.1.1.2 Output Capacitors
        3. 7.1.1.3 Input Capacitors
        4. 7.1.1.4 Power MOSFETs
        5. 7.1.1.5 EMI Filter
      2. 7.1.2 Error Amplifier and Compensation
    2. 7.2 Typical Applications
      1. 7.2.1 Design 1 – High Efficiency 2.2MHz Synchronous Buck Regulator
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 7.2.1.2.2 Buck Inductor
          3. 7.2.1.2.3 Current-Sense Components
          4. 7.2.1.2.4 Output Capacitors
          5. 7.2.1.2.5 Input Capacitors
          6. 7.2.1.2.6 Frequency Set Resistor
          7. 7.2.1.2.7 Feedback Resistors
          8. 7.2.1.2.8 Compensation Components
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Design 2 – High-Efficiency, 440kHz, Synchronous Buck Regulator
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Power Stage Layout
        2. 7.4.1.2 Gate Drive Layout
        3. 7.4.1.3 PWM Controller Layout
        4. 7.4.1.4 Thermal Design and Layout
        5. 7.4.1.5 Ground Plane Design
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Custom Design With WEBENCH® Tools
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
        1. 8.2.1.1 Low-EMI Design Resources
        2. 8.2.1.2 Thermal Design Resources
        3. 8.2.1.3 PCB Layout Resources
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4.1.2 Gate Drive Layout

The LM25139-Q1 high-side and low-side gate drivers incorporate short propagation delays, adaptive dead time control, and low-impedance output stages capable of delivering large peak currents with very fast rise and fall times to facilitate rapid turn-on and turn-off transitions of the power MOSFETs. Very high di/dt can cause unacceptable ringing if the trace lengths and impedances are not well controlled.

Minimization of stray or parasitic gate loop inductance is key to optimizing gate drive switching performance, whether series gate inductance resonates with MOSFET gate capacitance or common source inductance (common to gate and power loops) provides a negative feedback component opposing the gate drive command, thereby increasing MOSFET switching times. The following loops are important:

  • Loop 2: high-side MOSFET, Q1. During the high-side MOSFET turn-on, high current flows from the bootstrap (boot) capacitor through the gate driver and high-side MOSFET, and back to the negative terminal of the boot capacitor through the SW connection. Conversely, to turn off the high-side MOSFET, high current flows from the gate of the high-side MOSFET through the gate driver and SW, and back to the source of the high-side MOSFET through the SW trace. See also "loop 2" of Figure 7-26.
  • Loop 3: low-side MOSFET, Q2. During the low-side MOSFET turn-on, high current flows from the VCC decoupling capacitor through the gate driver and low-side MOSFET, and back to the negative terminal of the capacitor through ground. Conversely, to turn off the low-side MOSFET, high current flows from the gate of the low-side MOSFET through the gate driver and GND, and back to the source of the low-side MOSFET through ground. See also "loop 3" of Figure 7-26.

TI strongly recommends following circuit layout guidelines when designing with high-speed MOSFET gate drive circuits.

  • Connections from gate driver outputs, HO and LO, to the respective gates of the high-side or low-side MOSFETs must be as short as possible to reduce series parasitic inductance. Be aware that peak gate drive currents can be as high as 3A. Use 0.65mm (25mils) or wider traces. Use via or vias, if necessary, of at least 0.5mm (20mils) diameter along these traces. Route the HO, SW gate traces as differential pairs from the LM25139-Q1 to the applicable high-side MOSFETs, taking advantage of flux cancellation.
  • Minimize the current loop path from the VCC and CBOOT pins through the respective capacitors as these provide the high instantaneous current, up to 3A, to charge the MOSFET gate capacitance. Specifically, locate the bootstrap capacitor, CBOOT, close to the respective CBOOT, SW pin pair of the LM25139-Q1 to minimize the areas of "loop 2" associated with the high-side drivers. Similarly, locate the VCC capacitor, CVCC, close to the VCC and PGND pins of the LM25139-Q1 to minimize the areas of "loop 3" associated with the low-side drivers.