SLVSHO1 March   2025 TPS1689

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  PMBus and GPIO DC Characteristics
    7. 5.7  Telemetry
    8. 5.8  Logic Interface
    9. 5.9  Timing Requirements
    10. 5.10 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Undervoltage Protection
      2. 6.3.2  Insertion Delay
      3. 6.3.3  Overvoltage Protection
      4. 6.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 6.3.4.1 Slew rate (dVdt) and Inrush Current Control
          1. 6.3.4.1.1 Start-Up Timeout
        2. 6.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 6.3.4.3 Active Current Limiting During Start-Up
        4. 6.3.4.4 Short-Circuit Protection
      5. 6.3.5  Analog Load Current Monitor (IMON)
      6. 6.3.6  Overtemperature Protection
      7. 6.3.7  Analog Junction Temperature Monitor (TEMP)
      8. 6.3.8  FET Health Monitoring
      9. 6.3.9  Single Point Failure Mitigation
        1. 6.3.9.1 IMON Pin Single Point Failure
        2. 6.3.9.2 IREF Pin Single Point Failure
      10. 6.3.10 General Purpose Digital Input/Output Pins
        1. 6.3.10.1 Fault Response and Indication (FLT)
        2. 6.3.10.2 Power Good Indication (PG)
        3. 6.3.10.3 Parallel Device Synchronization (SWEN)
      11. 6.3.11 Stacking Multiple eFuses for Unlimited Scalability
        1. 6.3.11.1 Current Balancing During Start-Up
      12. 6.3.12 Quick Output Discharge(QOD)
      13. 6.3.13 Write Protect Feature(WP#)
      14. 6.3.14 PMBus® Digital Interface
        1. 6.3.14.1  PMBus® Device Addressing
        2. 6.3.14.2  SMBus Protocol
        3. 6.3.14.3  SMBus™ Message Formats
        4. 6.3.14.4  Packet Error Checking
        5. 6.3.14.5  Group Commands
        6. 6.3.14.6  SMBus™ Alert Response Address (ARA)
        7. 6.3.14.7  PMBus® Commands
        8. 6.3.14.8  Analog-to-digital Converter
        9. 6.3.14.9  Digital-to-analog Converters
        10. 6.3.14.10 DIRECT format Conversion
        11. 6.3.14.11 Blackbox Fault Recording
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Single Device, Standalone Operation
      2. 7.1.2 Single TPS1689 and multiple TPS1685 Devices, Parallel Connection
      3. 7.1.3 Multiple TPS1689 Devices: Parallel Connection With Individual Telemetry
      4. 7.1.4 Multiple Devices, Independent Operation (Multi-zone)
    2. 7.2 Typical Application: 54-V, 2-kW Power Path Protection with PMBus® Interface in Datacenter Servers
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Performance Plots
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Transient Protection
      2. 7.3.2 Output Short-Circuit Measurements
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Application Limitation and Errata
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

  • For all applications, TI recommends a ceramic decoupling capacitor of 0.1 μF or greater between the IN terminal and GND terminal.

  • For all applications, TI recommends a ceramic decoupling capacitor of 2.2 μF or greater between the OUT terminal and GND terminal.

  • The optimal placement of the decoupling capacitor is closest to the IN and GND terminals of the device. Care must be taken to minimize the loop area formed by the bypass-capacitor connection, the IN terminal, and the GND terminal of the IC. See Figure below for a PCB layout example.

  • High current-carrying power-path connections must be as short as possible and must be sized to carry at least twice the full-load current.

  • The GND terminal must be tied to the PCB ground plane at the terminal of the IC. The PCB ground must be a copper plane or island on the board.

  • The IN and OUT pins are used for Heat Dissipation. Connect to as much copper area as possible with thermal vias.

  • Locate the following support components close to their connection pins:
    • CIN

    • COUT

    • CVDD

    • CTEMP

    • RILIM

    • RIMON

    • CIREF

    • CDVDT

    • Resistors for the EN/UVLO pin

    • Resistors for the ADDR0, ADDR1 pins

  • Connect the other end of the component to the GND pin of the device with shortest trace length. The trace routing for the ADDR0, ADDR1, CIN, COUT, CVDD, CIREF, RILIM, RIMON, CTEMP and CDVDT components to the device must be as short as possible to reduce parasitic effects on the current limit and soft-start timing. These traces must not have any coupling to switching signals on the board.

  • Because the IMON, ILIM and IREF pins directly control the overcurrent protection behavior of the device, the PCB routing of these nodes must be kept away from any noisy (switching) signals.

  • TI recommends to keep the parasitic loading on SWEN pin to a minimum to avoid synchronization issues.

  • Protection devices such as TVS, snubbers, capacitors, or diodes must be placed physically close to the device they are intended to protect. These protection devices must be routed with short traces to reduce inductance. For example, TI recommends a protection Schottky diode to address negative transients due to switching of inductive loads, and it must be physically close to the OUT pins.