SLVSHO1 March   2025 TPS1689

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  PMBus and GPIO DC Characteristics
    7. 5.7  Telemetry
    8. 5.8  Logic Interface
    9. 5.9  Timing Requirements
    10. 5.10 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Undervoltage Protection
      2. 6.3.2  Insertion Delay
      3. 6.3.3  Overvoltage Protection
      4. 6.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 6.3.4.1 Slew rate (dVdt) and Inrush Current Control
          1. 6.3.4.1.1 Start-Up Timeout
        2. 6.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 6.3.4.3 Active Current Limiting During Start-Up
        4. 6.3.4.4 Short-Circuit Protection
      5. 6.3.5  Analog Load Current Monitor (IMON)
      6. 6.3.6  Overtemperature Protection
      7. 6.3.7  Analog Junction Temperature Monitor (TEMP)
      8. 6.3.8  FET Health Monitoring
      9. 6.3.9  Single Point Failure Mitigation
        1. 6.3.9.1 IMON Pin Single Point Failure
        2. 6.3.9.2 IREF Pin Single Point Failure
      10. 6.3.10 General Purpose Digital Input/Output Pins
        1. 6.3.10.1 Fault Response and Indication (FLT)
        2. 6.3.10.2 Power Good Indication (PG)
        3. 6.3.10.3 Parallel Device Synchronization (SWEN)
      11. 6.3.11 Stacking Multiple eFuses for Unlimited Scalability
        1. 6.3.11.1 Current Balancing During Start-Up
      12. 6.3.12 Quick Output Discharge(QOD)
      13. 6.3.13 Write Protect Feature(WP#)
      14. 6.3.14 PMBus® Digital Interface
        1. 6.3.14.1  PMBus® Device Addressing
        2. 6.3.14.2  SMBus Protocol
        3. 6.3.14.3  SMBus™ Message Formats
        4. 6.3.14.4  Packet Error Checking
        5. 6.3.14.5  Group Commands
        6. 6.3.14.6  SMBus™ Alert Response Address (ARA)
        7. 6.3.14.7  PMBus® Commands
        8. 6.3.14.8  Analog-to-digital Converter
        9. 6.3.14.9  Digital-to-analog Converters
        10. 6.3.14.10 DIRECT format Conversion
        11. 6.3.14.11 Blackbox Fault Recording
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Single Device, Standalone Operation
      2. 7.1.2 Single TPS1689 and multiple TPS1685 Devices, Parallel Connection
      3. 7.1.3 Multiple TPS1689 Devices: Parallel Connection With Individual Telemetry
      4. 7.1.4 Multiple Devices, Independent Operation (Multi-zone)
    2. 7.2 Typical Application: 54-V, 2-kW Power Path Protection with PMBus® Interface in Datacenter Servers
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Performance Plots
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Transient Protection
      2. 7.3.2 Output Short-Circuit Measurements
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Application Limitation and Errata
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

–40°C ≤ TJ ≤ +125°C, VIN = VDD = 45 V to 60 V, OUT = Open, RILIM = 931 Ω RIMON = 2.55 kΩ, VIREF = 1 V , FLT = 33 kΩ pull-up to 3.3 V, PGOOD = 33 kΩ pull-up to 3.3 V, COUT = 10 µF, CIN = 10 nF, dVdT = Open , VEN/UVLO = 2 V, TEMP/EECLK/GPIO1 = Open, AUX/EEDATA/GPIO2 = Open, ADDR0 = Open, ADDR1 = Open, SCL = 330Ω pull-up to 3.3 V, SDA = 330Ω pull-up to 3.3 V.  (All voltages referenced to GND, (unless otherwise noted))
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY (VDD)
VIN Input voltage range 9 80 V
VDD Input voltage range VIN 80 V
IQON(VDD) VDD ON state quiescent current VDD > VUVPR, VEN ≥ VUVLOR, VOVP < VOVPF 4.5 mA
VUVPR VDD Undervoltage Protection Threshold Rising VDD Rising 8.5 V
VUVPF VDD Undervoltage Protection Threshold falling VDD Falling 7.05 V
VUVPHYS UVP Hysteresis VDD 1.45 V
INPUT SUPPLY (IN)
VUVLOR(VIN) VIN undervoltage threshold rising VIN Rising, VIN_UV_FLT = 0x71 40.3 V
VUVLOF(VIN) VIN undervoltage threshold falling VIN Falling, VIN_UV_FLT = 0x71 38.7 V
IQON(VIN) VIN ON state quiescent current VEN ≥ VUVLOR 1.38 mA
IQOFF(VIN) VIN OFF state current   VSDR < VEN < VUVLO 1.83 mA
ISD(VIN) VIN shutdown current VEN < VSDF 1.81 mA
ENABLE / UNDERVOLTAGE LOCKOUT (EN/UVLO)
VUVLOR EN/UVLO pin voltage threshold for turning on, rising EN/UVLO  Rising 1.2 V
VUVLOF EN/UVLO pin voltage threshold for turning off and engaging QOD, falling  (primary device) EN/UVLO Falling 1.12 V
VUVLOHYS UVLO Hysteresis 94 mV
VSDF Shutdown threshold EN/UVLO Falling 0.46 V
VSDR Shutdown threshold EN/UVLO  Rising  0.51 V
OVERVOLTAGE PROTECTION (IN)
VIN-OVPR IN overvoltage protection threshold (rising) VIN_OV_FLT = 0xb1 60.1 V
VIN-OVPF IN overvoltage protection threshold (falling) VIN_OV_FLT = 0xb1 57 V
VIN-OVPHYS IN overvoltage protection threshold (Hysterisis) VIN_OV_FLT = 0xb1 3 V
ON-RESISTANCE (IN - OUT)
RON ON state resistance IOUT = 12 A 3.65 mΩ
CURRENT LIMIT REFERENCE (IREF)
VIREF Current Limit Reference DAC output
voltage		 VIREF = 0x32 (Default) 1 V
VIREF Current Limit Reference DAC output
voltage		 VIREF = 0x00 0.3 V
VIREF Current Limit Reference DAC output
voltage		 VIREF = 0x3F 1.182 V
CURRENT LIMIT (ILIM)
GILIM(LIN) Current Monitor Gain (ILIM:IOUT) vs. IOUT. Device in steady state (PG asserted), IOUT = 12 A 18.26 uA/A
Istart-up IOUT Start-up Current limit regulation threshold  VIN - VOUT = 350 mV 0.47 A
VFB Foldback voltage 2.11 V
OUTPUT CURRENT MONITOR AND OVERCURRENT PROTECTION (IMON)
GIMON Current Monitor Gain (IMON:IOUT) Device in steady state (PG asserted), IOUT = 12 A 18.25 uA/A
GIMON Current Monitor Gain (IMON:IOUT) Device in steady state (PG asserted),  IOUT = 4 A 18.28 uA/A
ITRIP IOUT Current limit trip (Circuit-Breaker) threshold RIMON = 2.32 Ω, VIREF = 1 V 21.52 A
CURRENT FAULT TIMER (ITIMER)
SHORT-CIRCUIT PROTECTION
IFFT Fixed fast trip threshold in steady state (primary) PG asserted High (MODE = Open) 87.27 A
ISFT Scalable fast trip current:ITRIP ratio DEVICE_CONFIG [12:11] = 00 40 A
ISFT Scalable fast trip current:ITRIP ratio DEVICE_CONFIG [12:11] = 01 2.5 A/A
ISFT Scalable fast trip current:ITRIP ratio DEVICE_CONFIG [12:11] = 10 2 A/A
ISFT Scalable fast trip current:ITRIP ratio DEVICE_CONFIG [12:11] = 11 1.5 A/A
ACTIVE CURRENT SHARING
RON(ACS) RON during Active current sharing VILIM > 1.1 x (1/3)xVIREF 4.67 mΩ
GIMON(ACS) IMON:IOUT ratio during active current limiting PG asserted High,  VILIM > 1.1 x VIREF 18.7 uA/A
CLREF(ACS) Ratio of Active current sharing trigger threshold to steady state circuit-breaker threshold PG asserted High 36.80 %
INRUSH CURRENT PROTECTION (DVDT)
IDVDT dVdt Pin Charging Current (Primary/Standalone mode) DEVICE_CONFIG[10:9] = 11 3.15 uA
IDVDT dVdt Pin Charging Current (Primary/Standalone mode) DEVICE_CONFIG[10:9] = 10 2.1 uA
IDVDT dVdt Pin Charging Current (Primary/Standalone mode) DEVICE_CONFIG[10:9] = 01 1.05 uA
IDVDT dVdt Pin Charging Current (Primary/Standalone mode) DEVICE_CONFIG[10:9] = 00 0.53 uA
GDVDT dVdt Gain  0.4 V < VdVdt  < 2.4 V 24.9 V/V
RDVDT dVdt Pin to GND Discharge Resistance 490 Ω
GHI
VGS(GHI) Rising  G-S Threshold when GHI/PG is asserted 7 V
VGS(GHI) Falling   G-S Threhold when GHI/PG is de-asserted 3.4 V
RON(GHI) Ron When GHI/PG is asserted 3.9 mΩ
QUICK OUTPUT DISCHARGE (QOD)
IQOD Quick Output Discharge pull-down current VSD(R) < VEN < VUVLO, 0 < Tj < 125 ℃, VIN = 51 V 21 mA
OVERTEMPERATURE PROTECTION (OTP)
TSD Absolute Thermal Shutdown Rising Threshold TJ Rising, , VIN = 51 V 150 °C
TSDHYS Absolute Thermal shutdown hysteresis TJ Falling, VIN = 51 V 13 °C
FET HEALTH MONITOR
VDSFLT FET D-S Fault Threshold SWEN = L, VIN = 51 V 0.5 V
ADDRESS SELECT (ADDR0/ADDR1)
IADDRx ADDR0 pin pull-up current 5.05 µA
ADDR1 pin pull-up current 5.05 µA
IOC_BKP Back-up overcurrent protection threshold  IMON short to GND 39 A