SLAA334B September   2006  – August 2018 MSP430BT5190 , MSP430F1101 , MSP430F1101A , MSP430F1111A , MSP430F112 , MSP430F1121 , MSP430F1121A , MSP430F1122 , MSP430F1132 , MSP430F122 , MSP430F1222 , MSP430F123 , MSP430F1232 , MSP430F133 , MSP430F135 , MSP430F147 , MSP430F1471 , MSP430F148 , MSP430F1481 , MSP430F149 , MSP430F1491 , MSP430F155 , MSP430F156 , MSP430F157 , MSP430F1610 , MSP430F1611 , MSP430F1612 , MSP430F167 , MSP430F168 , MSP430F169 , MSP430F2001 , MSP430F2002 , MSP430F2003 , MSP430F2011 , MSP430F2012 , MSP430F2013 , MSP430F2013-EP , MSP430F2101 , MSP430F2111 , MSP430F2112 , MSP430F2121 , MSP430F2122 , MSP430F2131 , MSP430F2132 , MSP430F2232 , MSP430F2234 , MSP430F2252 , MSP430F2252-Q1 , MSP430F2254 , MSP430F2272 , MSP430F2272-Q1 , MSP430F2274 , MSP430F233 , MSP430F2330 , MSP430F235 , MSP430F2350 , MSP430F2370 , MSP430F2410 , MSP430F2416 , MSP430F2417 , MSP430F2418 , MSP430F2419 , MSP430F247 , MSP430F2471 , MSP430F248 , MSP430F2481 , MSP430F249 , MSP430F2491 , MSP430F2616 , MSP430F2617 , MSP430F2618 , MSP430F2619 , MSP430F412 , MSP430F413 , MSP430F4132 , MSP430F415 , MSP430F4152 , MSP430F417 , MSP430F423 , MSP430F423A , MSP430F425 , MSP430F4250 , MSP430F425A , MSP430F4260 , MSP430F427 , MSP430F4270 , MSP430F427A , MSP430F435 , MSP430F4351 , MSP430F436 , MSP430F4361 , MSP430F437 , MSP430F4371 , MSP430F438 , MSP430F439 , MSP430F447 , MSP430F448 , MSP430F4481 , MSP430F449 , MSP430F4491 , MSP430F4616 , MSP430F46161 , MSP430F4617 , MSP430F46171 , MSP430F4618 , MSP430F46181 , MSP430F4619 , MSP430F46191 , MSP430F47126 , MSP430F47127 , MSP430F47163 , MSP430F47166 , MSP430F47167 , MSP430F47173 , MSP430F47176 , MSP430F47177 , MSP430F47183 , MSP430F47186 , MSP430F47187 , MSP430F47193 , MSP430F47196 , MSP430F47197 , MSP430F477 , MSP430F478 , MSP430F4783 , MSP430F4784 , MSP430F479 , MSP430F4793 , MSP430F4794 , MSP430F5131 , MSP430F5132 , MSP430F5151 , MSP430F5152 , MSP430F5171 , MSP430F5172 , MSP430F5304 , MSP430F5308 , MSP430F5309 , MSP430F5310 , MSP430F5324 , MSP430F5325 , MSP430F5326 , MSP430F5327 , MSP430F5328 , MSP430F5329 , MSP430F5333 , MSP430F5336 , MSP430F5338 , MSP430F5340 , MSP430F5341 , MSP430F5342 , MSP430F5418 , MSP430F5418A , MSP430F5419 , MSP430F5419A , MSP430F5435 , MSP430F5435A , MSP430F5436 , MSP430F5436A , MSP430F5437 , MSP430F5437A , MSP430F5438 , MSP430F5438A , MSP430F5500 , MSP430F5501 , MSP430F5502 , MSP430F5503 , MSP430F5504 , MSP430F5505 , MSP430F5506 , MSP430F5507 , MSP430F5508 , MSP430F5509 , MSP430F5510 , MSP430F5630 , MSP430F5631 , MSP430F5632 , MSP430F5633 , MSP430F5634 , MSP430F5635 , MSP430F5636 , MSP430F5637 , MSP430F5638 , MSP430F6433 , MSP430F6435 , MSP430F6436 , MSP430F6438 , MSP430F6630 , MSP430F6631 , MSP430F6632 , MSP430F6633 , MSP430F6634 , MSP430F6635 , MSP430F6636 , MSP430F6637 , MSP430F6638 , MSP430FE423 , MSP430FE4232 , MSP430FE423A , MSP430FE4242 , MSP430FE425 , MSP430FE4252 , MSP430FE425A , MSP430FE427 , MSP430FE4272 , MSP430FE427A , MSP430FG4250 , MSP430FG4260 , MSP430FG4270 , MSP430FG437 , MSP430FG438 , MSP430FG439 , MSP430FG4616 , MSP430FG4617 , MSP430FG4618 , MSP430FG4619 , MSP430FG477 , MSP430FG478 , MSP430FG479 , MSP430FW423 , MSP430FW425 , MSP430FW427 , MSP430G2001 , MSP430G2101 , MSP430G2102 , MSP430G2111 , MSP430G2112 , MSP430G2121 , MSP430G2131 , MSP430G2132 , MSP430G2152 , MSP430G2201 , MSP430G2201-Q1 , MSP430G2211 , MSP430G2212 , MSP430G2221 , MSP430G2231 , MSP430G2231-Q1 , MSP430G2232 , MSP430G2252 , MSP430G2302 , MSP430G2312 , MSP430G2332 , MSP430G2352 , MSP430G2402 , MSP430G2432 , MSP430G2452 , MSP430L092

 

  1.   MSP430 Flash Memory Characteristics
    1.     Trademarks
    2. 1 Flash Memory
    3. 2 Simplified Flash Memory Cell
    4. 3 Flash Memory Parameters
      1. 3.1 Data Retention
        1. 3.1.1 Leakage Mechanism
        2. 3.1.2 Data Retention Time
      2. 3.2 Flash Endurance
      3. 3.3 Cumulative Program Time
    5. 4 Flash Enhancements With Software
      1. 4.1 EEPROM Emulation With Flash
      2. 4.2 Enhancing Flash Data Retention Time With Flash Refresh
      3. 4.3 Verify Flash Data With a Checksum or CRC
    6. 5 Conclusion
    7. 6 References
  2.   Revision History

Leakage Mechanism

Data retention is limited by leakage current through the insulating oxide. Leakage can only occur if the floating gate is fully charged. Therefore, leakage only can flip an erased cell with the logic level 1 to a programmed cell with the logic level 0. According to Manabe [1], there are several phenomena that cause leakage.

  • Conventional stress induced leakage current (SILC) (see Figure 4a) explained by single trap-assisted tunneling conduction
  • Anomalous SILC explained by leakage path, hopping conduction mechanism (HCM) large leak, little E-field dependence, intermittent (see Figure 4b)
  • Trapped charges can block up the leak (see Figure 4c).
leak-mechanism-in-tunnel-oxides.gifFigure 4. Leak Mechanism in Tunnel Oxides

Leakage behavior depends on temperature, program/erase cycles, lifetime, and process. In an end application, the main influence on data retention is temperature.