SNOSDG7 May   2025 TPS7H6101-SEP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Timing Measurement
    2. 7.2 Deadtime Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Gate Drive Input Voltage
      2. 8.3.2  Linear Regulator Operation
      3. 8.3.3  Bootstrap Operation
        1. 8.3.3.1 Bootstrap Charging Methods
        2. 8.3.3.2 Bootstrap Capacitor
        3. 8.3.3.3 Bootstrap Diode
        4. 8.3.3.4 Bootstrap Resistor
      4. 8.3.4  High-Side Driver Startup
      5. 8.3.5  PWM_LI and EN_HI
      6. 8.3.6  Dead Time
      7. 8.3.7  Input Interlock Protection
      8. 8.3.8  Undervoltage Lockout and Power Good (PGOOD)
      9. 8.3.9  Negative SW Voltage Transients
      10. 8.3.10 Level Shifter
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Bootstrap and Bypass Capacitor
        2. 9.2.2.2 Bootstrap Diode
      3. 9.2.3 Application Results
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

8.1 Overview

The TPS7H6101 is a highly-integrated 200V e-mode GaN power-FET half bridge intended for use in synchronous buck converters, dual low-side topologies, and motor drives. The TPS7H6101 combines the half-bridge power FETs and isolated gate drivers in a 12mm by 9mm LGA package that minimizes junction-to-case thermal resistances, parasitic common mode inductance, and ohmic losses.

The driver can operate up to 2MHz, which enables use in high frequency, high efficiency GaN based power converter designs. The driver is designed to have a propagation delay of 35ns (typical) as well as 5.5ns (typical) high-side to low-side delay matching.

An external bootstrap diode is required for the gate driver and as such, the user has the ability to optimize the diode based on the application. The driver contains an internal switch in series with the bootstrap diode that can be used to prevent overcharging of the bootstrap capacitor and decreases reverse recovery losses in the diode.

The gate driver has two modes of operation: PWM mode and Independent Input Mode (IIM). The dual mode operation allows for the gate driver to be used with a wide number of PWM controllers to enable both synchronous rectifier control and GaN FET compatibility. The user also has the option to enable input interlock protection in IIM, allowing for anti-shoot through protection in synchronous buck and half-bridge topologies.