SNOSDJ7A February   2025  – December 2025 LMG3650R025

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Switching Parameters
      1. 6.1.1 Turn-On Times
      2. 6.1.2 Turn-Off Times
      3. 6.1.3 Drain-Source Turn-On and Turn-off Slew Rate
      4. 6.1.4 Zero-Voltage Detection Times (LMG3656R025 only)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 LMG3650R025 Functional Block Diagram
      2. 7.2.2 LMG3651R025 Functional Block Diagram
      3. 7.2.3 LMG3656R025 Functional Block Diagram
      4. 7.2.4 LMG3657R025 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Drive Strength Adjustment
      2. 7.3.2 GaN Power FET Switching Capability
      3. 7.3.3 VDD Supply
      4. 7.3.4 Overcurrent and Short-Circuit Protection
      5. 7.3.5 Overtemperature Protection
      6. 7.3.6 UVLO Protection
      7. 7.3.7 Fault Reporting
      8. 7.3.8 Auxiliary LDO (LMG3651R025 Only)
      9. 7.3.9 Zero-Voltage Detection (ZVD) (LMG3656R025 Only)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Detailed Design Procedure
        1. 8.2.1.1 Slew Rate Selection
        2. 8.2.1.2 Signal Level-Shifting
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Using an Isolated Power Supply
      2. 8.3.2 Using a Bootstrap Diode
        1. 8.3.2.1 Diode Selection
        2. 8.3.2.2 Managing the Bootstrap Voltage
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Reliability
        2. 8.4.1.2 Power-Loop Inductance
        3. 8.4.1.3 Signal-Ground Connection
        4. 8.4.1.4 Bypass Capacitors
        5. 8.4.1.5 Switch-Node Capacitance
        6. 8.4.1.6 Signal Integrity
        7. 8.4.1.7 High-Voltage Spacing
        8. 8.4.1.8 Thermal Recommendations
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 11.1 Tape and Reel Information
    3.     70

9.4 Electrostatic Discharge Caution

LMG3650R025 LMG3651R025 LMG3656R025 LMG3657R025 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.