SNOSDJ7A February   2025  – December 2025 LMG3650R025

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Switching Parameters
      1. 6.1.1 Turn-On Times
      2. 6.1.2 Turn-Off Times
      3. 6.1.3 Drain-Source Turn-On and Turn-off Slew Rate
      4. 6.1.4 Zero-Voltage Detection Times (LMG3656R025 only)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 LMG3650R025 Functional Block Diagram
      2. 7.2.2 LMG3651R025 Functional Block Diagram
      3. 7.2.3 LMG3656R025 Functional Block Diagram
      4. 7.2.4 LMG3657R025 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Drive Strength Adjustment
      2. 7.3.2 GaN Power FET Switching Capability
      3. 7.3.3 VDD Supply
      4. 7.3.4 Overcurrent and Short-Circuit Protection
      5. 7.3.5 Overtemperature Protection
      6. 7.3.6 UVLO Protection
      7. 7.3.7 Fault Reporting
      8. 7.3.8 Auxiliary LDO (LMG3651R025 Only)
      9. 7.3.9 Zero-Voltage Detection (ZVD) (LMG3656R025 Only)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Detailed Design Procedure
        1. 8.2.1.1 Slew Rate Selection
        2. 8.2.1.2 Signal Level-Shifting
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Using an Isolated Power Supply
      2. 8.3.2 Using a Bootstrap Diode
        1. 8.3.2.1 Diode Selection
        2. 8.3.2.2 Managing the Bootstrap Voltage
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Reliability
        2. 8.4.1.2 Power-Loop Inductance
        3. 8.4.1.3 Signal-Ground Connection
        4. 8.4.1.4 Bypass Capacitors
        5. 8.4.1.5 Switch-Node Capacitance
        6. 8.4.1.6 Signal Integrity
        7. 8.4.1.7 High-Voltage Spacing
        8. 8.4.1.8 Thermal Recommendations
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 11.1 Tape and Reel Information
    3.     70

6.1 Switching Parameters

Circuit Used to Determine Switching Parameters shows the circuit used to measure most switching parameters. The top device in this circuit re-circulates the inductor current and functions in third-quadrant mode only. The bottom device is the active device that turns on to increase the inductor current to the desired test current. The bottom device turns off and on to create switching waveforms at a specific inductor current. Both the drain current (at the source) and the drain-source voltage are measured. Measurement to Determine Propagation Delays and Slew Rates shows the specific timing measurement. TI recommends using the half-bridge as a double pulse tester. Excessive third-quadrant operation can overheat the top device.

LMG3650R025 LMG3651R025 LMG3656R025 LMG3657R025 Circuit Used to Determine Switching Parameters Figure 6-1 Circuit Used to Determine Switching Parameters
LMG3650R025 LMG3651R025 LMG3656R025 LMG3657R025 Measurement to Determine Propagation Delays and Slew Rates Figure 6-2 Measurement to Determine Propagation Delays and Slew Rates