The LMG365xR025 is a high-performance power GaN device with an integrated gate driver. The GaN device offers zero reverse recovery and ultra-low output capacitance to enables high efficiency in bridge-based topologies.

The integrated driver establishes that the device remains off for high drain slew rates. The integrated driver protects the GaN device from overcurrent, short-circuit, overtemperature, and VDD undervoltage. The LMG3656R025 has a zero-voltage detection (ZVD) feature that outputs a pulse signal on the ZVD pin when zero-voltage switching (ZVS) is detected. The LMG3657R025 includes the zero-current detection (ZCD) feature which sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.

Unlike Si MOSFETs, GaN devices do not have a p-n junction from source to drain and thus have no reverse recovery charge. However, GaN devices still conduct from source to drain similar to a p-n junction body diode, but with higher voltage drop and higher conduction loss. Therefore, minimize source-to-drain conduction time while the LMG365xR025 GaN FET is turned off.