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Technology family ABT Operating temperature range (°C) -55 to 125 Rating Military
Technology family ABT Operating temperature range (°C) -55 to 125 Rating Military
CDIP (J) 20 167.464 mm² 24.2 x 6.92 CFP (W) 20 90.5828 mm² 13.09 x 6.92 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

These 8-bit latches feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight latches of the SN54ABT573 and SN74ABT573A are transparent D-type latches. While the latch-enable (LE) input is high, the Q outputs follow the data (D) inputs. When LE is taken low, the Q outputs are latched at the logic levels set up at the D inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the latches. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

These 8-bit latches feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight latches of the SN54ABT573 and SN74ABT573A are transparent D-type latches. While the latch-enable (LE) input is high, the Q outputs follow the data (D) inputs. When LE is taken low, the Q outputs are latched at the logic levels set up at the D inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the latches. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet SN54ABT573, SN74ABT573A datasheet (Rev. F) 09 Sep 2003
* SMD SN54ABT573 SMD 5962-93219 21 Jun 2016
Application note Power-Up Behavior of Clocked Devices (Rev. B) PDF | HTML 15 Dez 2022
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 Jul 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dez 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 Jun 2004
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 16 Feb 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 Aug 2002
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 10 Mai 2002
Selection guide Advanced Bus Interface Logic Selection Guide 09 Jan 2001
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 Aug 1997
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 01 Jun 1997
Application note Designing With Logic (Rev. C) 01 Jun 1997
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 01 Mär 1997
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 01 Dez 1996
Application note Input and Output Characteristics of Digital Integrated Circuits 01 Okt 1996
Application note Live Insertion 01 Okt 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 Mai 1996

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