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TPS7H5020-SEP

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Strahlungsfester PWM-Controller mit 100 % Tastverhältnis zum Antreiben von MOSFET oder GaN-FETs

Produktdetails

Topology Boost, Flyback, Forward Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
Topology Boost, Flyback, Forward Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver datasheet (Rev. B) PDF | HTML 11 Feb 2026
* Radiation & reliability report TPS7H5020-SEP and TPS7H5021-SEP Single-Event Effects (SEE) Report (Rev. A) PDF | HTML 13 Feb 2026
* Radiation & reliability report TPS7H5020-SEP Production Flow and Reliability Report PDF | HTML 10 Sep 2025
* Radiation & reliability report TPS7H5020-SEP Total Ionizing Dose Report 05 Sep 2025
* Radiation & reliability report TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization 02 Sep 2025
Certificate TPS7H5020FLYEVM EU Declaration of Conformity (DoC) 05 Jun 2025
Selection guide TI Space Products (Rev. K) 04 Apr 2025
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 15 Sep 2022
E-book Radiation Handbook for Electronics (Rev. A) 21 Mai 2019

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

TPS7H5020EVM — TPS7H5020-SP – Evaluierungsmodul

Das TPS7H5020EVM demonstriert den Betrieb eines einzelnen TPS7H5020-SP-Strommodus-PWM-Controllers mit integriertem Gate-Treiber zusammen mit einem GaN-FET in einer Aufwärtskonfiguration. Einige Footprints der Platine können mit zusätzlichen Komponenten und Prüfpunkten bestückt werden, um das (...)
Benutzerhandbuch: PDF | HTML
Evaluierungsplatine

TPS7H5020FLYEVM — Evaluierungsmodul für TPS7H5020-SEP und QMLP-Flyback

Das TPS7H5020FLYEVM demonstriert den Betrieb eines TPS7H5020-SEP PWM-Controllers, der ein GaN-FET-Schaltelement in einer Flyback-Wandlertopologie ansteuert. Das EVM bietet Flexibilität zum Testen benutzerdefinierter Konfigurationen. Testpunkte und zusätzliche Footprints für Komponenten erleichtern (...)

Benutzerhandbuch: PDF | HTML
Simulationsmodell

TPS7H502X SIMPLIS Model

SLVMEC6.ZIP (25 KB) - SIMPLIS Model
Simulationsmodell

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - PSpice Model
Referenzdesigns

PMP23598 — Referenzdesign für synchronen 75-W-Durchflusswandler für Raumfahrtanwendungen

Dieses Referenzdesign verwendet einen strahlungstoleranten TPS7H5020-SEP-Pulsweitenmodulations-(Pulse-Width Modulation, PWM)-Controller und einen strahlungstoleranten TPS7H6005-SEP 200-V-GaN-Halbbrücken-Gate-Treiber, um eine hocheffiziente synchrone Forward-Topologie zu schaffen. Um eine genaue, (...)
Test report: PDF
Referenzdesigns

PMP23546 — 2,4-W-PSR-Flyback-Referenzdesign mit mehreren Ausgängen für Vorspannungsversorgungen

In diesem Referenzdesign wird TPS7H5020-SEP als primärseitig geregelter (PSR) Flyback-Controller verwendet. Der Eingang akzeptiert einen Bereich von 22 V bis 36 V, um eine 12-V-Vorspannung zu erzeugen, die auf die Primärmasse bezogen ist, und einen weiteren 12-V-Ausgang, der auf eine andere (...)
Test report: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
HTSSOP (PWP) 24 Ultra Librarian

Bestellen & Qualität

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  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

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