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LM5113

NO RECOMENDADO PARA NUEVOS DISEÑOS

Controlador de puerta de medio puente de 1.2 A/5 A y 90 V para GaNFET

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LM5113 no se recomienda para nuevos diseños
Este producto sigue estando disponible para los clientes existentes. Los nuevos diseños deben considerar un producto alternativo.
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Reemplazo con funcionalidad mejorada del dispositivo comparado
LM5113-Q1 ACTIVO Controlador de puerta de medio puente de 1.2 A/5 A y 100 V para GaNFET para automoción Automotive qualified
Pin por pin con la misma funcionalidad que el dispositivo comparado
LMG1205 ACTIVO Controlador de compuerta de medio puente de 1.2 A, 5 A y 90 V con UVLO de 5 V para GaNFET y MOSFE Same specifications, DSBGA package

LM5113

NO RECOMENDADO PARA NUEVOS DISEÑOS
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Detalles del producto

Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Bootstrap supply voltage clamping, Split outputs on high and low side Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Bootstrap supply voltage clamping, Split outputs on high and low side Driver configuration Dual, Independent
DSBGA (YFX) 12 3.24 mm² (— mm × — mm) WSON (DPR) 10 16 mm² (4 mm × 4 mm)
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.
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* Hoja de datos LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. I) PDF | HTML 28/10/2019

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