Inicio Administración de potencia Etapas de potencia Etapas de potencia de nitruro de galio (GaN)
Inicio
Administración de potencia
Etapas de potencia
Etapas de potencia de nitruro de galio (GaN)

LMG3427R030

ACTIVO

Transistor de efecto de campo (FET) de nitruro de galio (GaN) de 600 V y 30 mΩ con controlador, prot

Haga su pedido ahora
Hoja de datos

LMG3427R030

ACTIVO
Hoja de datos Haga su pedido ahora

Detalles del producto

VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RQZ) 54 144 mm² (12 mm × 12 mm)
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

filter Buscar otro/a Etapas de potencia de nitruro de galio (GaN)
Descargar Ver vídeo con transcripción Video

Documentación técnica

No se encontraron resultados. Borre su búsqueda y vuelva a intentarlo.
Ver todo 3
Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos LMG342xR030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. F) PDF | HTML 28/08/2024
Nota sobre la aplicación How to Avoid LMG3427 ZCD Timing Issue Caused by Inter-phase Capacitance in TCM PFC (Rev. A) PDF | HTML 9/06/2026
Analog Design Journal A novel CCM-TCM multimode control method for totem-pole bridgeless PFC PDF | HTML 10/04/2026

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Tarjeta secundaria

LMG3422EVM-043 — Tarjeta secundaria LMG3422R030 de medio puente de 600 V y 30 mΩ

El LMG3422EVM-043 configura dos transistores de efecto de campo (FET) de nitruro de galio (GaN) LMG3422R030 en un semipuente con la función de protección contra sobrecorriente bloqueada y todos los circuitos periféricos auxiliares necesarios. Esta EVM está diseñada para trabajar en conjunto con (...)
Guía del usuario: PDF | HTML
Productos y hardware compatibles
En inventario
Límite:
??asset.out-of-stock-ti_es_MX??
No disponible
Herramienta de cálculo

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Productos y hardware compatibles
Diseño de referencia

PMP23537 — Diseño de referencia PFC sin puente tótem controlado multimodal CCM-TCM de 3.6 kW

Este diseño de referencia es un convertidor de corrección del factor de potencia (PFC) de 3.6 kW, monofásico y sin puente tótem, destinado a servidores con fuente de alimentación redundante común de sistema de hardware modular (M-CRPS). La PFC funciona en modo de conducción continua (CCM) en picos (...)
Productos y hardware compatibles
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
VQFN (RQZ) 54 Ultra Librarian
Se aplican los Términos y condiciones estándar de TI para los elementos de evaluación.

Pedidos y calidad

Los productos recomendados pueden tener parámetros, módulos de evaluación o diseños de referencia relacionados con este producto de TI.

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

Ver todos los temas del foro en inglés

El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.

Si tiene alguna pregunta sobre calidad, encapsulados o pedido de productos de TI, consulte el servicio de asistencia de TI. ​​​​​​​​​​​​​​

Videos