LMH9135 are high-performance,
single-channel, differential input to single-ended output transmit radio frequency
(RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can
support the requirements for next generation 5G active antenna systems (AAS) or
small-cell applications while driving the input of a power amplifier (PA). The RF
amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm
Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB
bandwidth. The device is internally matched for 100-Ω differential input impedance
providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at
the input. Also, the device is internally matched for 50-Ω single-ended output
impedance that is required to easily interface with a post-amplifier, surface
acoustic wave (SAW) filter, or power amplifier (PA).
Operating on a single 3.3 V supply,
the device consumes about 395 mW typical active power making it suitable for
high-density 5G massive MIMO applications. Also, the device is available in a space
saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating
temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC
compliant power down pin available for fast power down and power up of the device
suitable for time division duplex (TDD) systems.
LMH9135 are high-performance,
single-channel, differential input to single-ended output transmit radio frequency
(RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can
support the requirements for next generation 5G active antenna systems (AAS) or
small-cell applications while driving the input of a power amplifier (PA). The RF
amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm
Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB
bandwidth. The device is internally matched for 100-Ω differential input impedance
providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at
the input. Also, the device is internally matched for 50-Ω single-ended output
impedance that is required to easily interface with a post-amplifier, surface
acoustic wave (SAW) filter, or power amplifier (PA).
Operating on a single 3.3 V supply,
the device consumes about 395 mW typical active power making it suitable for
high-density 5G massive MIMO applications. Also, the device is available in a space
saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating
temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC
compliant power down pin available for fast power down and power up of the device
suitable for time division duplex (TDD) systems.