LMH9135

ACTIVO

Amplificador de 3.2 GHz a 4.2 GHz y de diferencial a extremo único con balun integrado

Detalles del producto

Type Active Balun Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 31.5 P1dB (typ) (dBm) 18 Frequency of harmonic distortion measurement (GHz) 3.5 Current consumption (mA) 120 Number of channels 1 Operating temperature range (°C) -40 to 105 Rating Catalog Output enable Yes
Type Active Balun Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 31.5 P1dB (typ) (dBm) 18 Frequency of harmonic distortion measurement (GHz) 3.5 Current consumption (mA) 120 Number of channels 1 Operating temperature range (°C) -40 to 105 Rating Catalog Output enable Yes
WQFN (RRL) 12 4 mm² (2 mm × 2 mm)
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos LMH9135 3.2 – 4.2 GHz Differential to Single-Ended Amplifier with Integrated Balun datasheet PDF | HTML 21/08/2020
Certificado LMH9135RRLEVM EU Declaration of Conformity (DoC) 15/05/2020

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

AFE79-LMH9-EVM — Placa de evaluación de diseño de referencia AFE7920 con baluns activos LMH9126, LMH9226, LMH9135 y L

El módulo de evaluación (EVM) AFE79-LMH9-EVM es una tarjeta para evaluar el rendimiento de la familia AFE79xx de transceptores de muestreo de RF integrados en interfaz con la familia LMH9xxx de baluns activos. El AFE79-LMH9-EVM muestra el AFE7920, LMH9126, LMH9226, LMH9135 y LMH9235. El (...)
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Placa de evaluación

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El módulo de evaluación (EVM) LMH9135 se utiliza para evaluar el dispositivo LMH9135, que es un amplificador en bloque de 18 dB de ganancia de entrada diferencial a salida de extremo único disponible en un encapsulado RRL de 2x2 mm2 y 12 pines. El dispositivo es idóneo para cumplir los requisitos (...)
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Kit de desarrollo de software (SDK)

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Modelo de simulación

LMH9135 S-parameter Models

SBOMB71.ZIP (15 KB) - Modelo de parámetros-S
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Herramienta de cálculo

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Pedidos y calidad

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