Detalles del producto

Current consumption (mA) 118 Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 33 P1dB (typ) (dBm) 18 Number of channels 1 Operating temperature range (°C) -40 to 105 Type Active Balun Rating Catalog
Current consumption (mA) 118 Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 33 P1dB (typ) (dBm) 18 Number of channels 1 Operating temperature range (°C) -40 to 105 Type Active Balun Rating Catalog
WQFN (RRL) 12 4 mm² 2 x 2
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

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Documentación técnica

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* Data sheet LMH9135 3.2 – 4.2 GHz Differential to Single-Ended Amplifier with Integrated Balun datasheet PDF | HTML 21 ago 2020
Certificate LMH9135RRLEVM EU Declaration of Conformity (DoC) 15 may 2020
EVM User's guide LMH9135 Evaluation Module User's Guide PDF | HTML 02 abr 2020

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

AFE79-LMH9-EVM — Placa de evaluación de diseño de referencia AFE7920 con baluns activos LMH9126, LMH9226, LMH9135 y L

The AFE79-LMH9-EVM evaluation module (EVM) is a board for evaluating the performance of the AFE79xx family of integrated RF sampling transceivers interfaced with the LMH9xxx family of active baluns. The AFE79-LMH9-EVM showcases the AFE7920, LMH9126, LMH9226, LMH9135, and LMH9235. The device is (...)
Guía del usuario: PDF
Placa de evaluación

LMH9135-EVM — Módulo de evaluación de amplificador de 3.55 GHz con entrada diferencial a salida de un solo extremo

The LMH9135 evaluation module (EVM) is used to evaluate the LMH9135 device, which is a differential input to single-ended output 18dB gain block amplifier available in 2x2mm2 12-pin RRL package. The device is well suited to support requirements for the next generation 5G m-MIMO active antenna (...)
Guía del usuario: PDF
Kit de desarrollo

PCM-3P-PC802 — SoC PHY de celda pequeña 5G Picocom PC802 para AFE77xxD

The PC802 is a purpose-designed PHY SoC for 5GNR/LTE small cell disaggregated and integrated RAN architectures. This platform is designed for seamless interfacing and evaluation of TI’s AFE77xxD with Picocom's PC802 for split 7.2 radio unit (O-RU) with low PHY functionality. The SoC interfaces (...)
Desde: Picocom
Guía del usuario: PDF | HTML
Modelo de simulación

LMH9135 S-parameter Models

SBOMB71.ZIP (15 KB) - S-Parameter Model
Paquete Pasadores Descargar
WQFN (RRL) 12 Ver opciones

Pedidos y calidad

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  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
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