LF156QML

활성

QML 인증을 받은 군용 등급, 싱글, 40V, 5MHz, FET 입력 연산 증폭기

제품 상세 정보

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 5 Input bias current (max) (pA) 100 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 5 Input bias current (max) (pA) 100 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
TO-CAN (LMC) 8 80.2816 mm² (8.96 mm × 8.96 mm)
  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared with MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability

Common Features

  • Low Input Bias Current: 30pA
  • Low Input Offset Current: 3pA
  • High Input Impedance: 1012Ω
  • Low Input Noise Current: 0.01 pA / √Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features

  • Extremely Fast Settling
    • Time to 0.01% 1.5μs
  • Fast Slew Rate 12V/µs
  • Wide Gain Bandwidth 5MHz
  • Low Input Noise Voltage 12 nV / √Hz

All trademarks are the property of their respective owners.

  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared with MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability

Common Features

  • Low Input Bias Current: 30pA
  • Low Input Offset Current: 3pA
  • High Input Impedance: 1012Ω
  • Low Input Noise Current: 0.01 pA / √Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features

  • Extremely Fast Settling
    • Time to 0.01% 1.5μs
  • Fast Slew Rate 12V/µs
  • Wide Gain Bandwidth 5MHz
  • Low Input Noise Voltage 12 nV / √Hz

All trademarks are the property of their respective owners.

This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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기술 자료

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* 데이터 시트 LF156QML JFET Input Operational Amplifiers datasheet (Rev. A) 2013. 3. 25
e북 The Signal e-book: A compendium of blog posts on op amp design topics PDF | HTML 2017. 3. 28

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TO-CAN (LMC) 8 Ultra Librarian

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