LMG2656

활성

일체형 드라이버, 보호 및 전류 감지 기능이 있는 650V 230mΩ GaN 하프 브리지

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document-pdfAcrobat LMG2656 650V 230 mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation datasheet (영어) PDF | HTML

LMG2656

활성

데이터 시트

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제품 상세 정보

VDS (max) (V)

650

RDS(on) (mΩ)

230

ID (max) (A)

3.6

Features

Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Integrated current sense, Overtemperature protection

Rating

Catalog

Operating temperature range (°C)

-40 to 125

VDS (max) (V)

650

RDS(on) (mΩ)

230

ID (max) (A)

3.6

Features

Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Integrated current sense, Overtemperature protection

Rating

Catalog

Operating temperature range (°C)

-40 to 125

VQFN (RFB)

19

48 mm² (8 mm × 6 mm)

650V GaN power-FET half bridge
230mΩ low-side and high-side GaN FETs
Integrated gate drivers with <100ns low propagation delays
Programmable turn-on slew rate control
Current-sense emulation with high-bandwidth and high accuracy
Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
Low-side (INL) / high-side (INH) gate-drive interlock
High-side (INH) gate-drive signal level shifter
Smart-switched bootstrap diode function
High-side start up: <8µs
Low-side / high-side cycle-by-cycle overcurrent protection
Overtemperature protection
AUX idle quiescent current: 250µA
AUX standby quiescent current: 50µA
BST idle quiescent current: 70µA
8mm × 6mm QFN package with dual thermal pads

650V GaN power-FET half bridge
230mΩ low-side and high-side GaN FETs
Integrated gate drivers with <100ns low propagation delays
Programmable turn-on slew rate control
Current-sense emulation with high-bandwidth and high accuracy
Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
Low-side (INL) / high-side (INH) gate-drive interlock
High-side (INH) gate-drive signal level shifter
Smart-switched bootstrap diode function
High-side start up: <8µs
Low-side / high-side cycle-by-cycle overcurrent protection
Overtemperature protection
AUX idle quiescent current: 250µA
AUX standby quiescent current: 50µA
BST idle quiescent current: 70µA
8mm × 6mm QFN package with dual thermal pads

The LMG2656 is a 650V 230mΩ GaN power-FET half bridge. The LMG2656 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to PCB power ground.

The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2656 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.

The LMG2656 is a 650V 230mΩ GaN power-FET half bridge. The LMG2656 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to PCB power ground.

The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2656 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.

filter

기타 질화 갈륨(GaN) 전력계 찾기

다운로드 스크립트와 함께 비디오 보기 비디오

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상위 문서	유형	직함	형식 옵션	최신 영어 버전 다운로드	날짜
*	데이터 시트	LMG2656 650V 230 mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation datasheet	PDF \| HTML		2025. 6. 27

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

도터 카드

LMG2656EVM-102 — LMG2656 도터 카드

LMG2656EVM-102는 모든 하프 브리지 토폴로지에서 TI의 통합 GaN 장치를 평가할 수 있는 빠르고 쉬운 플랫폼을 제공하도록 설계되었습니다. 보드는 소켓 스타일 외부 연결부의 보드 하단 가장자리에 있는 6개의 전원 핀 및 12개의 디지털 핀을 사용하여 더 큰 시스템과 인터페이스하도록 설계되었습니다. 전원 핀은 고전압 DC 버스, 스위치 노드 및 전원 접지로 구성된 메인 스위칭 루프를 형성합니다. 디지털 핀은 PWM 게이트 입력을 통해 LMG2656 장치를 제어하고, 저전압 공급 장치와 보조 전원을 제공하고, 오류를 디지털 (...)

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