OPA2314-EP

활성

향상된 제품, 듀얼, 5.5V, 3MHz, RRIO 연산 증폭기

제품 상세 정보

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 1.5 Vos (offset voltage at 25°C) (max) (mV) 2.5 Iq per channel (typ) (mA) 0.15 Vn at 1 kHz (typ) (nV√Hz) 14 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 150 Offset drift (typ) (µV/°C) 1 Features EMI Hardened Input bias current (max) (pA) 10 CMRR (typ) (dB) 80 Iout (typ) (A) 0.02 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.005 Output swing headroom (to positive supply) (typ) (V) -0.005
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 1.5 Vos (offset voltage at 25°C) (max) (mV) 2.5 Iq per channel (typ) (mA) 0.15 Vn at 1 kHz (typ) (nV√Hz) 14 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 150 Offset drift (typ) (µV/°C) 1 Features EMI Hardened Input bias current (max) (pA) 10 CMRR (typ) (dB) 80 Iout (typ) (A) 0.02 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.005 Output swing headroom (to positive supply) (typ) (V) -0.005
VSON (DRB) 8 9 mm² 3 x 3
  • Low IQ: 150 µA/ch (max)
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 14 nV/√Hz at 1 kHz
  • Gain Bandwidth: 3 MHz
  • Low Input Bias Current: 0.2 pA
  • Low Offset Voltage: 0.5 mV
  • Unity-Gain Stable
  • Internal RF/EMI Filter
  • Low IQ: 150 µA/ch (max)
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 14 nV/√Hz at 1 kHz
  • Gain Bandwidth: 3 MHz
  • Low Input Bias Current: 0.2 pA
  • Low Offset Voltage: 0.5 mV
  • Unity-Gain Stable
  • Internal RF/EMI Filter

The OPA2314 is a dual channel operational amplifier and represents a new generation of low-power, general-purpose CMOS amplifiers. Rail-to-rail input and output swings, low quiescent current (150 µA typ at 5.0 VS) combined with a wide bandwidth of 3 MHz, and very low noise (14 nV/√Hz at 1 kHz) make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. The low input bias current supports applications with mega-ohm source impedances.

The robust design of the OPA2314 provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 300 pF, an integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high ESD protection (4-kV HBM).

This device is optimized for low-voltage operation as low as +1.8 V (±0.9 V) and up to +5.5 V (±2.75 V), and is specified over the full extended temperature range of ±40°C to +150°C.

The OPA2314 (dual) is offered in a DFN-8 package.

The OPA2314 is a dual channel operational amplifier and represents a new generation of low-power, general-purpose CMOS amplifiers. Rail-to-rail input and output swings, low quiescent current (150 µA typ at 5.0 VS) combined with a wide bandwidth of 3 MHz, and very low noise (14 nV/√Hz at 1 kHz) make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. The low input bias current supports applications with mega-ohm source impedances.

The robust design of the OPA2314 provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 300 pF, an integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high ESD protection (4-kV HBM).

This device is optimized for low-voltage operation as low as +1.8 V (±0.9 V) and up to +5.5 V (±2.75 V), and is specified over the full extended temperature range of ±40°C to +150°C.

The OPA2314 (dual) is offered in a DFN-8 package.

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기술 자료

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2개 모두 보기
유형 직함 날짜
* Radiation & reliability report OPA2314ASDRBTEP Reliability Report 2017/08/25
* Data sheet Low Power Low Noise RRI/O 1.8V CMOS Op-Amp datasheet 2012/09/25

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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