홈 증폭기 연산 증폭기 (op amps) 범용 연산 증폭기
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연산 증폭기 (op amps)
범용 연산 증폭기

TLE2061M-D

구형

SOIC-8 패키지를 적용한 군용 등급, 싱글, 36V, 2MHz, 입력-V+, JFET 입력 연산 증폭기

지금 주문하기
데이터 시트
TLE2061M-D은(는) 더 이상 생산되지 않습니다.
이 제품은 더 이상 생산되지 않습니다. 새로운 설계는 대체 제품을 고려해야 합니다.
open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
OPA991 활성 싱글, 40V, 4.5MHz, 저전력 연산 증폭기 Rail-to-rail I/O, wider supply range (2.7 V to 40 V), higher GBW (4.5 MHz), lower offset voltage (0.75 mV), lower noise (10.8 nV/√Hz)

TLE2061M-D

구형
데이터 시트 지금 주문하기

제품 상세 정보

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.4 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 6 Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.045 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 1.3 Output swing headroom (to positive supply) (typ) (V) -1.3
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.4 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 6 Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.045 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 1.3 Output swing headroom (to positive supply) (typ) (V) -1.3
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Wide bandwidth: 1.1MHz GBW
  • Low supply current: 120µA/Ch (typical)
  • High output drive, specified into 100Ω loads
  • Lower noise floor than earlier generations of low-power BiFET
  • Wide bandwidth: 1.1MHz GBW
  • Low supply current: 120µA/Ch (typical)
  • High output drive, specified into 100Ω loads
  • Lower noise floor than earlier generations of low-power BiFET

The TLE206x is a family of high voltage (36V) FET-Input operational amplifiers. These devices offer good DC precision and AC performance. This includes low noise floor and high slew rate, making TLE206x family a flexible, general-performance amplifier. TLE206x are available in standard packages PDIP and SOIC.

The TLE206xM, TLE206xAM, TLE206xBM devices use the original design with JFET-input transistors and On-chip Zener trimming of offset voltage. The TLE206xM, TLE206xAM, TLE206xBM are available in CDIP, LCCC and CFP package.

The TLE206x is a family of high voltage (36V) FET-Input operational amplifiers. These devices offer good DC precision and AC performance. This includes low noise floor and high slew rate, making TLE206x family a flexible, general-performance amplifier. TLE206x are available in standard packages PDIP and SOIC.

The TLE206xM, TLE206xAM, TLE206xBM devices use the original design with JFET-input transistors and On-chip Zener trimming of offset voltage. The TLE206xM, TLE206xAM, TLE206xBM are available in CDIP, LCCC and CFP package.
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* Data sheet TLE206x,TLE206xA, TLE206xB FET-Input High-Output-Drive μPower Operational Amplifiers datasheet (Rev. D) PDF | HTML 2026/03/04

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치