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LM5114

現行

具 4-V UVLO 與分離輸出的 7.6-A/1.3-A 單通道閘極驅動器

現在提供此產品的更新版本

open-in-new 比較替代產品
功能相同,但引腳輸出與所比較的裝置不同
UCC27611 現行 具 4-V UVLO 和 5-V 穩壓輸出的 4-A/6-A 單通道閘極驅動器 More recent driver with higher supply voltage capability, smaller package

產品詳細資料

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7.6 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 12.6 Features Controllable Rise and Fall Times Operating temperature range (°C) -40 to 125 Rise time (ns) 12 Fall time (ns) 3 Propagation delay time (µs) 0.012 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Low Side
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7.6 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 12.6 Features Controllable Rise and Fall Times Operating temperature range (°C) -40 to 125 Rise time (ns) 12 Fall time (ns) 3 Propagation delay time (µs) 0.012 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Low Side
SOT-23 (DBV) 6 8.12 mm² 2.9 x 2.8 WSON (NGG) 6 9 mm² 3 x 3
  • Independent Source and Sink Outputs for
    Controllable Rise and Fall Times
  • 4-V to 12.6-V Single Power Supply
  • 7.6-A/1.3-A Peak Sink and Source Drive Current
  • 0.23-Ω Open-drain Pulldown Sink Output
  • 2-Ω Open-drain Pullup Source Output
  • 12-ns (Typical) Propagation Delay
  • Matching Delay Time Between Inverting and
    Noninverting Inputs
  • TTL/CMOS Logic Inputs
  • 0.68-V Input Hysteresis
  • Up to 14-V Logic Inputs (Regardless of VDD Voltage)
  • Low Input Capacitance: 2.5-pF (Typical)
  • –40°C to 125°C Operating Temperature Range
  • Pin-to-Pin Compatible With MAX5048
  • 6-Pin SOT-23
  • Independent Source and Sink Outputs for
    Controllable Rise and Fall Times
  • 4-V to 12.6-V Single Power Supply
  • 7.6-A/1.3-A Peak Sink and Source Drive Current
  • 0.23-Ω Open-drain Pulldown Sink Output
  • 2-Ω Open-drain Pullup Source Output
  • 12-ns (Typical) Propagation Delay
  • Matching Delay Time Between Inverting and
    Noninverting Inputs
  • TTL/CMOS Logic Inputs
  • 0.68-V Input Hysteresis
  • Up to 14-V Logic Inputs (Regardless of VDD Voltage)
  • Low Input Capacitance: 2.5-pF (Typical)
  • –40°C to 125°C Operating Temperature Range
  • Pin-to-Pin Compatible With MAX5048
  • 6-Pin SOT-23

The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation.

The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation.

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技術文件

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類型 標題 日期
* Data sheet LM5114 Single 7.6-A Peak Current Low-Side Gate Driver datasheet (Rev. F) PDF | HTML 2015年 11月 30日
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024年 1月 22日
Application note Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 2023年 9月 8日
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021年 11月 10日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application note Improving Efficiency of DC-DC Conversion through Layout 2019年 5月 7日
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Application brief Enable Function with Unused Differential Input 2018年 7月 11日
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日
White paper A comprehensive methodology to qualify the reliability of GaN products 2015年 3月 2日
White paper Advancing Power Supply Solutions Through the Promise of GaN 2015年 2月 24日
User guide AN-2206 LM5114 Evaluation Board (Rev. A) 2013年 5月 3日

設計與開發

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開發板

LM5114BSDEVAL — LM5114 升壓閘極驅動器評估板

The LM5114 is a single low-side gate driver with 7.6A/1.3A peak sink/source drive current capability. It can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations or to drive secondary synchronous FETs in isolated topologies. The LM5114 evaluation board is (...)

使用指南: PDF
TI.com 無法提供
模擬型號

LM5114A PSpice Transient Model

SNVM318.ZIP (33 KB) - PSpice Model
模擬型號

LM5114A TINA-TI Transient Reference Design

SNVM368.TSC (87 KB) - TINA-TI Reference Design
模擬型號

LM5114A TINA-TI Transient Spice Model

SNVM367.ZIP (9 KB) - TINA-TI Spice Model
模擬型號

LM5114A Unencrypted PSpice Transient Model

SNVMAD7.ZIP (1 KB) - PSpice Model
模擬型號

LM5114B PSpice Transient Model

SNVM317.ZIP (30 KB) - PSpice Model
模擬型號

LM5114B TINA-TI Transient Reference Design

SNVM365.TSC (87 KB) - TINA-TI Reference Design
模擬型號

LM5114B TINA-TI Transient Spice Model

SNVM366.ZIP (9 KB) - TINA-TI Spice Model
模擬型號

LM5114B Unencrypted PSpice Transient Model

SNVMAD8.ZIP (1 KB) - PSpice Model
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一,涵蓋我們的類比和電源產品組合,以及特定類比行為模型,且使用無需支付費用。

PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前,建立完整的終端設備設計和解決方案原型,進而縮短上市時間並降低開發成本。 

在 PSpice for TI 設計與模擬工具中,您可以搜尋 TI (...)
參考設計

PMP22510 — 切換式電容器整合式降壓 (SCIB) 電源轉換器參考設計

此切換式電容器整合式降壓 (SCIB) 轉換器是一款高度最佳化設計,適用於高功率、高密度單輸出電源轉換器,可在廣泛 40 V 至 60 V 輸入軌範圍內運作,以產生每相高達 40A 負載電流的 8.0 V、5.0 V、3.3 V 或 1.8 V 軌。此參考設計將 CSD95490Q5MC 和 CSD95379Q3M NexFET 功率 MOSFET 級、UCC27212 驅動器 IC、電容器和電感器整合在 23mm x 23mm 尺寸的 PCB 配置中,並與多相降壓控制器 TPS53667 相容,可完成功率級切換功能。
Test report: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOT-23 (DBV) 6 Ultra Librarian
WSON (NGG) 6 Ultra Librarian

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  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
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  • 晶圓廠位置
  • 組裝地點

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