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電源保護開關與控制器
理想二極體與 ORing 控制器

LM74681

現行

適用 PoE 電源應用的 100V 理想二極體橋接控制器

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產品規格表

LM74681

現行
產品規格表 立即訂購

產品詳細資料

Vin (max) (V) 90 Vin (min) (V) 30 FET External single FET Device type Ideal diode bridge controller Number of channels 4 Rating Catalog Features Enable, Full bridge diode rectifier controller, Linear control, Reverse current blocking, Reverse polarity protection, Under voltage lock out Iq (typ) (mA) 0.27 Iq (max) (mA) 0.45 IGate source (typ) (µA) 160 IGate sink (typ) (mA) 100 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -1 Design support EVM VGS (max) (V) 14 Shutdown current (ISD) (mA) (A) 0.0000382 Product type Ideal diode controller
Vin (max) (V) 90 Vin (min) (V) 30 FET External single FET Device type Ideal diode bridge controller Number of channels 4 Rating Catalog Features Enable, Full bridge diode rectifier controller, Linear control, Reverse current blocking, Reverse polarity protection, Under voltage lock out Iq (typ) (mA) 0.27 Iq (max) (mA) 0.45 IGate source (typ) (µA) 160 IGate sink (typ) (mA) 100 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -1 Design support EVM VGS (max) (V) 14 Shutdown current (ISD) (mA) (A) 0.0000382 Product type Ideal diode controller
WSON (DRR) 12 9 mm² 3 x 3
  • Input operating voltage range: 30V to 90V
    • 100V absolute maximum
  • 4× integrated gate drive control
  • 165µA gate pull-up strength
  • 100mA gate pull-down strength
  • Ultra-low quiescent current of 0.27µA during detection and classification phase (VIN1-IN2 < 23V)
  • Linear gate regulation control for supply ORing applications
    • VTG_REG = 11mV
  • Enable pin for user controlled device on/off function
  • –40°C to 125°C operating junction temperature range
  • Small footprint: 3mm × 3mm WSON-12
    • Meets IPC-9592 spacing rules
  • Input operating voltage range: 30V to 90V
    • 100V absolute maximum
  • 4× integrated gate drive control
  • 165µA gate pull-up strength
  • 100mA gate pull-down strength
  • Ultra-low quiescent current of 0.27µA during detection and classification phase (VIN1-IN2 < 23V)
  • Linear gate regulation control for supply ORing applications
    • VTG_REG = 11mV
  • Enable pin for user controlled device on/off function
  • –40°C to 125°C operating junction temperature range
  • Small footprint: 3mm × 3mm WSON-12
    • Meets IPC-9592 spacing rules

The LM74681 is a 100V ideal diode bridge controller capable of driving a MOSFET bridge, enabling efficient low-loss bridge rectifier solutions in Power over Ethernet (PoE) applications. It allows a Power over Ethernet, powered device (PD) to receive power from RJ-45 data pairs, spare pairs, or any combination of the two, regardless of voltage polarity. The integrated charge pump allows use of N-channel MOSFETs, which are smaller and more cost effective than P-channel MOSFETs for the same power level. The LM74681 along with N-channel MOSFET bridge can replace the conventional diode bridge and can be conveniently implemented in both 2-pair and 4-pair PoE PD systems. In the event of a power source failure or short circuit, a rapid turn-off feature reduces reverse current spikes. The device also features an ultra-low quiescent current of 0.27µA, which ensures that there is no data corruption during the PoE PD detection and classification phase. This device is characterized for operation over a junction temperature range of –40°C to +125°C.

The LM74681 is a 100V ideal diode bridge controller capable of driving a MOSFET bridge, enabling efficient low-loss bridge rectifier solutions in Power over Ethernet (PoE) applications. It allows a Power over Ethernet, powered device (PD) to receive power from RJ-45 data pairs, spare pairs, or any combination of the two, regardless of voltage polarity. The integrated charge pump allows use of N-channel MOSFETs, which are smaller and more cost effective than P-channel MOSFETs for the same power level. The LM74681 along with N-channel MOSFET bridge can replace the conventional diode bridge and can be conveniently implemented in both 2-pair and 4-pair PoE PD systems. In the event of a power source failure or short circuit, a rapid turn-off feature reduces reverse current spikes. The device also features an ultra-low quiescent current of 0.27µA, which ensures that there is no data corruption during the PoE PD detection and classification phase. This device is characterized for operation over a junction temperature range of –40°C to +125°C.
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類型 標題 日期
* Data sheet LM74681 100V Ideal Diode Bridge Controller for PoE Powered Applications datasheet PDF | HTML 2024年 12月 27日
Application brief Achieve Low Loss Rectification Using TI's Diode Bridge Controllers PDF | HTML 2025年 4月 9日
Certificate LM74681EVM EU Declaration of Conformity (DoC) 2024年 10月 31日

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開發板

LM74681EVM — LM74681 評估模組

LM74681 評估模組 (EVM) 可協助設計人員評估 LM74681 理想二極體橋接控制器 (12 針腳 DRR 封裝) 的運作和性能。此 EVM 展示由 LM74681 驅動的 N 通道功率 MOSFET 如何模擬極低順向電壓二極體，並協助在 POE 應用的偵測和分類階段，以極低的 IQ 為極性無關系統供電。
使用指南: PDF | HTML
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模擬型號

LM74681 PSPICE Model

SNOM807.ZIP (349 KB) - PSpice Model
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