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SN74HC10-EP

現行

強化型產品 3 通道、3 輸入、2V 至 6V 5.2mA 驅動強度 NAND 閘

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產品規格表

SN74HC10-EP

現行
產品規格表 立即訂購

產品詳細資料

Technology family HC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10-50ns) Data rate (max) (Mbps) 28 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
Technology family HC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10-50ns) Data rate (max) (Mbps) 28 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
TSSOP (PW) 14 32 mm² (5 mm × 6.4 mm) SOIC (D) 14 51.9 mm² (8.65 mm × 6 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Wide Operating Voltage Range of 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Max ICC
  • Typical tpd = 9 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Wide Operating Voltage Range of 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Max ICC
  • Typical tpd = 9 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A • B • C)\ or Y = A\ + B\ + C\ in positive logic.

The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A • B • C)\ or Y = A\ + B\ + C\ in positive logic.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 SN74HC10-EP datasheet 2004/1/6
* VID SN74HC10-EP VID V6204688 2016/6/21

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