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SN74LVC2G00W-EP

現行

強化型產品 2 通道、2 輸入、1.65V 至 5.5-V NAND 閘

立即訂購
產品規格表

SN74LVC2G00W-EP

現行
產品規格表 立即訂購

產品詳細資料

Technology family LVC Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 115
Technology family LVC Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 115
SSOP (DCT) 8 11.8 mm² (2.95 mm × 4 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 115°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 1000-V Charged-Device Model (C101)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 115°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 1000-V Charged-Device Model (C101)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 SN74LVC2G00W-EP datasheet 2005/8/5
* VID SN74LVC2G00W-EP VID V6205623 2016/6/21

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